CGD will discuss GaN at electronica

This marks the second time that the company has exhibited at the electronics trade fair and conference.

“Since our first appearance at Electronica, CGD has made remarkable steps. We have introduced our P2 series ICeGaNICs that feature RDS(on) levels down to 25 mΩ, supporting multi kW power levels with the highest efficiency. We have announced a deal with TSMC, the leading IC fabrication house in the world which ensures quality and supply of our innovative power devices," said Andrea Briccoin, Chief Marketing Officer, CGD. "Also, studies by leading academic research establishment, Virginia Tech University, have demonstrated that our ICeGaN GaN technology is more reliable and robust than other GaN platforms. GaN is now available for use at higher power levels, and at electronica we are expecting to meet with designers who are eager to take advantage of the efficiency and power density benefits that GaN can bring to their latest designs.”

During the show CGD will have two presentations: on the 12th November at 13:20-14:10 CGD's CTO and Co-Founder Professor Florin Udrea will join a panel of GaN experts for a panel discussion moderated by Maurizio Di Paolo Emilio, Editor-in-Chief, Power Electronics news; and at 16:10-16:35 Professor Udrea will present at the Power Electronis Forum on ICeGaN.

The power devices field has undergone significant change due to the emergence of Wide Band Gap semiconductors, more specifically Gallium Nitride (GaN) and Silicon Carbide (SiC). Traditionally, GaN has been used for lower power consumer applications (e.g., power supplies), while SiC dominated the medium to high power markets, such as industrial (e.g., motor drives) and automotive applications (e.g., traction inverters).

SiC's superior scaling of on-state resistance at high voltages gives it an edge above 1.2 kV, but GaN is now competing with SiC at 650V for all power levels. ICeGaN, featuring sensing and protection functions, surpasses discrete SiC in terms of robustness and ease of paralleling, offering notable advantages for 650V high-power applications. Additionally, with the rise of multi-level topologies for traction inverters, GaN may challenge SiC's 1.2kV market. Ultimately, both technologies have a bright future, with overlap expected in high-power (10-500kW) applications.