BICS Flash demonstrated on NVM Express SSD

12th May 2017

Toshiba

Enaie Azambuja

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Toshiba Electronics Europe has announced Toshiba’s debut demonstration of the new 64-layer BiCS FLASH 3D technology on an XG Series client Non-Volatile Memory Express (NVMe) Peripheral Component Interconnect Express (PCIe) SSD at Dell EMC World 2017, taking place from 8-11 May in Las Vegas. Toshiba’s latest BiCS FLASH delivers a mature combination of performance, cost and endurance for all SSD types.

BiCS FLASH is a three-dimensional (3D) flash memory stacked cell structure suitable for applications that require high capacity and performance, such as enterprise and consumer SSDs. The 512 gigabit (GB) (64 gigabyte), 64-layer device with 3-bit-per-cell (TLC) technology was recently added to Toshiba’s BiCS FLASH memory product line.

The new BiCS FLASH is based on the third generation 64-layer stacking process featuring 65% greater bit density per mm2 than Toshiba’s 48-layer, 256GB (32 gigabyte) device.

The new XG Series SSD is an ideal platform to launch the 64-layer flash memory, due to the product’s broad adoption, maturity and robustness, honed over multiple generations of PCIe/NVMe client SSD product releases.

“The future of SSDs is 3D,” said Greg Wong, Founder and Principal Analyst of Forward Insights. “3D flash memory is enabling the production of higher capacity and more cost effective SSDs to better meet a variety of requirements across the consumer and enterprise spaces.”

Toshiba is currently migrating all client, data center and enterprise SSDs to the newest BiCS FLASH 64-layer 3D memory. This migration sets Toshiba up for extending their recent recognition by IDC as the fastest growing storage device vendor in the $17 billion solid state drive (SSD) segment for 2016.