eBook sheds light on power solutions

In Powering the Future: Advanced Power Solutions for Efficiency and Robustness, subject matter experts from ADI and Mouser offer in-depth analyses of the most important components, architectures and applications in power systems.

Chapters in the eBook discuss effective electromagnetic interference (EMI) management, reducing equivalent series resistance (ESR) and equivalent series inductance (ESL) in switching power supplies and managing power supply noise with voltage supervisors.

Other topics include buck-boost circuits, enhancing system robustness with ideal diodes and eFuses, and leveraging gallium nitride (GaN) technology for improved efficiency.

ADI has years of experience in the field of power management and offers engineers a broad portfolio of solutions, many of which are highlighted in the eBook.

The LT3046 linear regulator features ADI's ultra-low noise and ultra-high power supply rejection ratio (PSRR) architecture for powering noise-sensitive applications.

An ultra-low current, single-channel supervisory IC, the MAX16162 is designed to monitor the power supply voltage, enabling the target microcontroller or microprocessor to leave the reset state and begin operating.

The LTM8080 is a super low-noise, dual output DC/DC μModule regulator with patented silicon, layout and packaging innovations, specifically designed to power digital loads while reducing switching regulator noise for data converters, RF transmitters, FPGAs, op-amps, transceivers, medical scanners and more.

A half-bridge GaN driver features integrated top and bottom driver stages, driver logic control, and protections. The LT8418 can be configured into synchronous half-bridge, full-bridge topologies or buck, boost, and buck-boost topologies.

The LTC7890/1 synchronous step-down controllers are high-performance, DC-DC devices that drive N-channel synchronous GaN field-effect transistor (FET) power stages from input voltages up to 100V.

These controllers offer a solution to challenges traditionally faced when using GaN FETs. The devices simplify the application design with no protection diodes or additional external components needed compared to silicon metal-oxide-semiconductor field-effect transistor (MOSFET) solutions.