Analysis
Z-RAM Ultra-Dense Memory Now Backed by 21 Patents
Innovative Silicon (ISi), the developer of ZRAM high density memory intellectual property has
announced that it has been awarded its 21st patent, and has another 43 more patent applications pending worldwide. For 2007, to date, the company has already been granted four U.S. patents for low power consumption, data storage and other important contributions related to its memory technology. The newest patent numbers include 7,170,807; 7,187,581; 7,184,298 and 7,177,175.
“TISi’s portfolio of patented inventions in the area of ultra-dense semiconductor memory technology that exploits the floating body effect of SOI devices was first presented in 2001 at the IEEE International SOI Conference. Since that time, ISi’s Z-RAM technology has unveiled two generations of its products with Z-RAM Gen2 being announced in December 2006.