Yole & SERMA compare different SiC MOSFETs

1200V SiC MOSFET is the enabler of the BEV transition to 800V system. Indeed, SiC MOSFETs have become pivotal in power electronics, transforming numerous applications with their exceptional performance traits. SiC MOSFETs offer impressive attributes, including high breakdown voltage, low on-state resistance, and excellent thermal conductivity, positioning them as ideal choices for power-switching devices in high-frequency and high-temperature settings. Yole Group forecasts that the SiC device market will hit $10 billion by 2029.

Amine Allouche, Senior Technology & Cost Analyst, Semiconductor Substrates & Materials at Yole Group, says: “The increasing demand for efficient and reliable power electronic systems in industries like electric vehicles, renewable energy, and industrial automation has heightened the necessity for a thorough analysis of SiC MOSFETs.”

In this context, in addition to its annual market and technology reports, Power SiC and Power SiC – Manufacturing 2024, and its quarterly Monitor, Power SiC/GaN Compound Semiconductor Market Monitor, Yole has teamed up with SERMA Technologies, which brings its expertise in electronic technology performance testing, to present the first volume of their new SiC MOSFET Discretes Performance Analysis report.

The two companies have combined their expertise to release this first volume, which evaluates and compares five 1200V-class discrete SiC MOSFETs (along with a reference Si IGBT device) from global manufacturers under identical test conditions. Key parameters and characteristics are assessed to offer valuable insights for engineers, researchers, and industries aiming for optimised power solutions.

This new SiC MOSFET Discretes Performance Comparison Analysis 2024 Vol 1 report thoroughly examines the static performance of selected SiC MOSFETs to provide a comprehensive understanding of their advantages. Indeed, this first volume provides a performance analysis and comparison of 5 discrete SiC MOSFETs of 1200V-class from worldwide players: Wolfspeed (C3M0075120D), ROHM (SCT3080KLHR), Infineon (AIMW120R080M1), STMicroelectronics (SCTW40N120G2VAG), Anbonsemi (AS1M080120P), and a reference Si IGBT device from Infineon (IKW15N120CS7).

The comparative analysis includes the evaluation of key metrics such as on-state resistance, drain-to-source voltage, threshold voltage, breakdown voltage, and leakage currents under various operating conditions. The report also presents data and graphs of important parameters of the devices tested, including RDS(on)(VGS), RDS(on)(IDS), VDS, VGS(th), VBR(DSS), IDSS, IGSS, QG, IDS(VDS), and ISD(VSD) tested at various temperatures (from -55°C up to 175°C). For example, the temperature evolution of the Vgs(th) and the breakdown voltage Vbr were characterised to assess the temperature stability behaviour of the compared devices all over the temperature range.

Pierre-Emmanuel Blanc, Power Component Test Manager at SERMA Technologies, comments: “Performance tests are conducted at various temperatures (-55°C, -40°C, 25°C, 150°C, 175°C) and adhere to JEDEC norms and standards, such as JESD 24 and JEP 183. The test protocol, outlined in the report, involves testing three DuTs for each reference.”