WaferEtch and WaferStorm unveiled by SSEC

Resulting in 50% more process chambers within the same small footprint of the legacy products, the One key CoO reduction driver was enabled by an engineering break-through that makes the chambers more compact and stackable.

Superior performance, improved yields, and increased throughput at a lower CoO are the cornerstones of SSEC's single wafer wet processing approach, says Laura Rothman Mauer, Chief Technical Officer of Solid State Equipment LLC. She added, We have worked closely with our customers to develop practical solutions to some of the industry's toughest manufacturing challenges in 2.5D and 3D ICs, MEMS, and compound semiconductors. The launch of these preconfigured product lines is the culmination of this work, and we are excited to bring these innovations to market.

The WaferStorm platform is designed for solvent-based processes such as resist strip, metal lift-off, and TSV cleaning. The WaferEtch platform is configured for aqueous-based etch processes such as through-silicon via reveal.

WaferEtch

The WaferEtch platform is aqueous-based, customizable platforms uniquely configured to meet the needs of specific etch applications for 3D ICs, MEMS, and Compound Semiconductor processes. These systems use a wet etch process chemistry that demonstrates optimal etch rate and in situ cleaning.

Specifically configured to tackle the requirements of TSV reveal, which is the process where the backside of the wafer is thinned to reveal the copper interconnects. It has become a target area in the manufacture of 2.5D and 3D IC packaging for process control and cost reduction. TSV REVEALER makes the reduction in CoO 3D TSVs more economically feasible. The TSV REVEALER replaces three tools required for the dry etch approach: plasma etch, silicon thickness measurement, and clean. An optical end point detection system with advanced algorithms determines when vias are revealed. Integration of a wafer thickness measurement sensor in the etch system provides closed-loop control of the etching process.

WaferStorm

Initially available in three unique configurations the WaferStorm platform is solvent-based platform (TSV CLEANER, METAL LIFTER, and DRY FILM REMOVER). SSEC's unique soak and spray technology provides enhanced performance at lower CoO than conventional wet bench-only or spray-only approaches. The process combines equal soak time in the wet buffer tank for each wafer, followed by spray, and then a final step depending on the process being performed. This unique combination reduces both spray time and chemistry use, whilst adding a significant level of process control. The reduction in spray time results in enhanced throughput.

WaferStorm tsv cleaner

Essential to reliability the TSV clean is a critical part of the process. The deep reactive ion etch process leaves behind a polymer residue, essentially leading to defects and voids in the barrier, seed, and fill steps that follow. SSEC's WaferStorm TSV CLEANER is proven to remove residues in high-aspect-ratio holes that wet bench-only or spray-only tools leave behind. The tool features equal-time soak software for process control.

WaferStorm metal lifter

The SSEC WaferStorm METAL LIFTER is configured specifically to perform the sequential soak and spray combinations unique to the process. Consisting of the sequential steps of photolithography, metal deposition and solvent lift-off of both metal and non-metal substances in MEMS and compound semiconductor applications. Operating in a low-oxygen atmosphere, the immersion station maintains the bath for longer. Following a soak in the immersion tank, lift-off takes place in a spray station using a high-pressure chemical spray, which translates to increased throughput. The tool features a lift-off material filtration station and strainers for separating metal films, resulting in the complete removal of the metal.

WaferStorm dry film remover

Removal of dry film resists used in advanced microbumping processes is a challenge due to the film thickness and composition. Combining heated chemistries and proprietary soak and spray at high pressure the SSEC WaferStorm DRY FILM REMOVER rapidly and completely removes stubborn dry film residue. The soak step uses heated solvents throughout the buffer cycle time. Next being softened by the soak, the wafers are transferred to the single-wafer spray station where they are exposed to high-pressure fan sprays with heated solvents for rapid removal of dry film residue. This combination guarantees thorough removal and increased throughput.