Analysis
Kilopass Receives Frost & Sullivan Award For Non-Volatile Memory Innovation
Kilopass Technology has announced that Frost & Sullivan awarded Kilopass the 2012 Global Technology Innovation Award in NVM. The award recognizes Kilopass Virtual Crosspoint Memory for increasing the bit density of NVM in a standard logic CMOS process by four fold. At less than half the cost of embedded or external flash with die area similar to SRAM and the flexibility of field programmability, a number of applications will benefit from VCM, from microcontrollers to touch display drivers.
“WFor the 2012 Global Technology Innovation Award in Non-volatile Memory, Frost & Sullivan evaluated three companies offering NVM memory using five criteria: (1) uniqueness of technology, (2) impact on new products/applications, (3) impact on functionality, (4) impact on customer value, and (5) relevance of innovation to industry. Out of a possible 10 in each category, Kilopass scored 8 in the first two and last categories, and 9 in the remaining two, for a rated average of 8.8. The weighted averages for the other two companies considered for the award were 7.8 and 6.6. Kilopass was the clear choice.
“Through the VCM bit cell technology, Kilopass is offering customers the ability to enjoy high-density NVM, thus delivering increased value,” said Robin Varghese, research analyst for Frost & Sullivan's Semiconductors Group under the Measurements and Instrumentation business unit. “Its ability to cater to a wide variety of devices that are manufactured in the range between 180 nm to 20 nm makes the technology ideal for a plethora of products and new applications that require compact form, high battery life, and memory capacity.”