The 2025 GaN outlook: what’s next?

To learn more about what we can expect from the GaN market in 2025, Harry Fowle, Associate Editor at Electronic Specifier, spoke with Joahnnes Schoiswohl, Head of GaN Business Line at Infineon Technologies.

Moving beyond traditional application adoptions

GaN has been around for a while now, from its first uses in blue light-emitting diodes in the 90s, to its popularity in smaller, more efficient, and much more effective chargers we have today. Whilst the technology most certainly shines in these applications, moving beyond this point of adoption has always been the next major milestone for the technology.

As we move into 2025, GaN is now finally at that tipping point it needs to cross the wider adoption line, and that is something that GaN-pioneer Infineon strongly believes. As Schoiswohl explains: “We see several factors driving the shift in the adoption. GaN-based solutions offer superior efficiency, power density, and reduced carbon footprints, allowing for the creation of smaller and more efficient devices.” It is these end-product benefits that is triggering the uptick in GaN-based solutions across a plethora of industries.

“The fastest uptick, beyond USB-C chargers, we are seeing are in high-power SMPS for server and AI servers, solar power systems, home appliances, and e-mobility as on-board charging solutions,” he continues.

But whilst the benefits of GaN have been evident for some years now, there’s always been a limiting factor hindering its widespread adoption – price. Here, Schoiswohl offered insight into what’s changed as we move into 2025. “Infineon sees price-parity with silicon in sight and we have our 300mm GaN wafer technology ready to facilitate this transition – as the first in the market, which will definitely support scaling GaN overall.”

Infineon is certainly the first to reach the 300mm GaN wafer milestone, as well as pushing for 200mm SiC, but not the only company with it in the works. As the likes of Texas Instruments (TI), GlobalFoundries, Veeco, and more play catch up, the cost barrier of adoption will only continue to erode.

“We are proud to be the world’s first semiconductor manufacturer who has succeeded in processing 300mm GaN wafers on an integrated pilot line in existing 300mm silicon production at our power fab in Villach, Austria.

“We are leveraging well-established competence in the existing production of 300mm silicon and 200mm GaN. 300mm manufacturing ensures superior customer supply stability through scalability, and we will scale GaN capacity aligned with market needs. 300mm GaN manufacturing will put Infineon in a position to shape the growing GaN market which is estimated to reach several billion US dollars by the end of the decade.”

A push into automotive

The EV market has been a ripe growing ground for wide bandgap materials, particularly SiC where its adoption has grown rapidly in recent years. For GaN, however, this adoption has been a slower process, owing to the differences between the two wide bandgap materials.

Yet, despite this initial emergence stage, GaN’s use in the automotive sector has been steadily rising, particularly in combination with SiC to create ideal solutions from a combination of the two technologies strengths.

“The adoption of GaN in combination with SiC in automotive traction inverters will enable more efficient electromobility for both 400 and 800V EV systems allowing for extended drive range per battery charge,” explains Schoiswohl.

“For on-board chargers, new topologies which leverage bidirectional GaN switches can provide the highest power densities and efficiencies. The unique characteristics of the bidirectional GaN switch also allow the reduction of semiconductor size and cost.

“In addition, GaN facilitates reduced electromagnetic interference (EMI) through its zero reverse recovery charge. It provides lowest switching losses, enabling smaller magnetics and easier implementation of advanced topologies The resulting reduced heat dissipation also means less energy is wasted as heat during the charging process, resulting in a more efficient battery charging and energy savings during this process.”

It is these beneficial factors that are driving the adoption of GaN within the EV market as the industry looks to continue its own path of adoption and advancement.

Bringing efficiency to the home

Home appliances represent a prime opportunity for more efficient, power-dense, and cost-effective solutions. Even marginal efficiency gains can significantly impact product competitiveness, expanding market reach and improving sustainability. According to Infineon, the GaN market for consumer applications is expected to grow at a 121% compound annual growth rate (CAGR) from 2023 to 2029, driven by the increasing demand for energy-efficient products and tightening regulatory standards.

For example, GaN can deliver a 2% efficiency gain in an 800W home appliance, such as a refrigerator, washing machine, or microwave. This seemingly small improvement could be enough to bump an appliance into a higher efficiency rating bracket, influencing both where it can be sold and how it is perceived by consumers and regulators. Additionally, GaN’s ability to switch at higher frequencies enables more compact, lightweight, and quieter power supplies, reducing heat generation and enhancing appliance longevity.

As Schoiswohl explains: “Beyond access to market, energy-efficiency ratings are also crucial for building consumer confidence in the products they are buying. Consumers often look for energy-efficient appliances as a way to reduce their energy bills and minimise environmental impact. GaN technology allows for more efficient power conversion, as highlighted by the 2% efficiency improvement for 800W appliances.”

Beyond consumer benefits, government policies and energy efficiency regulations are accelerating GaN adoption. The EU, US, and China are implementing stricter energy efficiency standards, requiring manufacturers to develop appliances that consume less power. With GaN enabling significant reductions in energy waste, manufacturers can more easily comply with evolving regulations, making their products more versatile across global markets. Additionally, eco-labels such as ENERGY STAR and EU Energy Labels reward higher efficiency, further incentivising manufacturers to integrate GaN-based power supplies.

However, cost remains the biggest hurdle to widespread GaN adoption in home appliances. Historically, the higher cost of GaN-based power electronics has been a barrier to mass-market integration. But as prices continue to decline and approach parity with silicon, GaN is poised to become the standard choice for next-generation appliances, unlocking better performance, lower energy consumption, and greater consumer appeal. With smart home technologies, wireless power transfer, and the electrification of household devices driving demand for more efficient power solutions, GaN’s role in home appliances is set to expand rapidly.

Enabling the next generation of robotics

One of the more underappreciated yet transformative applications of wide-bandgap materials is in the evolution of next-generation robotics. From industrial automation to AI-driven humanoids, GaN’s unique properties are unlocking new possibilities in power efficiency, miniaturisation, and performance enhancement.

As Schoiswohl highlights: “GaN is able to improve the efficiency and compactness in a wide array of robotics, from delivery drones, humanoid robots, and AI-driven automation applications. This reduction in size and weight contributes to more compact and agile robot designs, improving mobility and manoeuvrability. The ability to switch extremely fast allows for higher inverter switching frequencies, which translate into reduced motor-ripple currents, reduced output capacitors, and overall system size reductions.”

Beyond size and weight advantages, GaN’s high switching frequencies and lower losses play a crucial role in enhancing robotic motion control and power delivery systems. These improvements are particularly vital in:

• Autonomous mobile robots (AMRs) and delivery drones, where weight reduction directly extends battery life and range
• Industrial robotic arms, which require precise and rapid motion control for high-speed automation in manufacturing and logistics
• AI-driven humanoid robots, where GaN-based power electronics reduce heat generation, allowing for more compact actuator designs and improved energy efficiency

Additionally, GaN reduces electromagnetic interference (EMI), a crucial factor in sensor-driven and AI-powered robots, ensuring cleaner signal processing for enhanced perception and decision-making. As robotics continues to evolve, GaN’s integration is set to redefine what is possible, driving innovations in speed, agility, and operational efficiency across the sector.

The rise of residential solar & energy storage systems (ESS)

Solar photovoltaic (PV) power generation has been on the rise over the past decade, between 2010 and 2023, global solar PV capacity increased 40x, and this trend will only continue into the late 2020s. Currently, this style of power generation only accounts for just 5% of total electricity generation yet is set to expand to around 17% by the end of the decade. In such a future, the need for more efficient power conversion and transmission is essential to its success.

This is where GaN and other wide bandgap materials will see traction, particularly in residential solar power generation. The integration of GaN devices in solar micro inverters brings notable advantages, particularly in power handling and efficiency. Their ability to support higher power levels while maintaining a compact form factor makes them ideal for modern inverter designs. Faster switching times further improve efficiency and minimise heat generation. Both unidirectional and bidirectional GaN technologies contribute significantly to advancing solar micro inverters.

A key trend in solar energy is bidirectional energy flow, especially in V2X (vehicle-to-everything) systems, which manage battery charge and discharge for residential and EV applications. GaN bidirectional switches (BDS) are revolutionising V2X by blocking voltage in both directions, enabling efficient energy control while enhancing reliability under varying conditions. Unlike conventional back-to-back switches, a single bidirectional GaN switch reduces PCB space, lowers costs, and eliminates the need for intermediate DC links –boosting power density.

In hybrid and string inverters, both unidirectional and bidirectional GaN devices contribute to cost reduction, higher power density, and improved efficiency. Their low switching losses and superior thermal performance are particularly valuable in energy storage systems, where hybrid inverters regulate energy flow between the grid, storage, and load, ensuring a stable and efficient power supply.

Power optimisers, which regulate photovoltaic (PV) panel current and voltage, also benefit from GaN's high power density and efficiency. GaN's superior thermal conductivity allows for more effective heat dissipation, lowering operating temperatures and improving system reliability compared to traditional silicon-based devices.

2025 and beyond

As GaN continues to reshape the power semiconductor landscape, 2025 and beyond will see further advancements that enhance its efficiency, power density, and integration capabilities across various applications. With growing demands from electric vehicles (EVs), AI data centres, and renewable energy systems, the industry is set to explore new innovations in GaN technology, including monolithic bidirectional switches and hybrid integration with silicon (Si) and silicon carbide (SiC).

A key development on the horizon is the evolution of bidirectional GaN switches, which enable single-stage power conversion and significantly improve energy efficiency. Infineon has identified this as a priority area, with its monolithic bidirectional GaN switch based on CoolGaN technology set to redefine power architectures. This technology not only enhances power density but also reduces costs and enables bidirectional power flow—a critical feature for grid-linked applications such as energy storage and EV charging infrastructure.

"One key priority for Infineon is its groundbreaking monolithic bidirectional GaN switch, based on our well-established CoolGaN technology. This product enables single-stage power conversion in a wide range of applications. This not only boosts power density and efficiency but also reduces overall costs. Additionally, this technology supports bidirectional power flow, which is crucial for applications linked to the grid, including energy storage systems and electric-vehicle chargers," says Schoiswohl.

Another significant trend is the integration of GaN with complementary semiconductor technologies. Hybrid system approaches that combine GaN with Si and SiC are expected to play a vital role in optimising efficiency, performance, and cost-effectiveness. AI data centres, for instance, stand to benefit greatly from these hybrid solutions, as they enhance power density while balancing thermal management and system complexity.

"By leveraging GaN, AI data centres can improve power density, which directly influences the amount of computational power that can be delivered within a given rack space. While GaN presents clear advantages, hybrid system integration approaches combining GaN with Si and SiC are ideal for meeting the requirements of AI data centres and achieving the best trade-offs between efficiency, power density and system cost. The same applies for many other applications, which can truly benefit from the aforementioned hybrid approach," he added.

Additionally, Infineon and other key players are expected to introduce a range of integrated solutions that combine GaN switches with intelligent driver technologies. These will include smart features such as sensing and protection, further streamlining the adoption of GaN-based power systems across industries.

"Furthermore, we will see the release of a range of integrated solutions from Infineon combining switches and drivers, featuring smart features such as sensing and protection," concluded Schoiswohl.

As GaN adoption accelerates, its role in power electronics will expand beyond traditional applications, enabling next-generation energy solutions that align with global decarbonisation and digitalisation goals. The interplay between GaN, Si, and SiC will likely define the future of power semiconductor technology, allowing industries to fine-tune efficiency, performance, and cost at an unprecedented level. With continuous investment and innovation, the coming years promise to unlock the full potential of GaN in shaping a more sustainable and efficient technological landscape.

You can learn even more about GaN and it's market trends in our recent podcast with Andy Smith, Director of Training and Technical Outreach, Power Integrations!