Analysis
Innovative Silicon Inc in ESC's Disruption Zone
Innovative Silicon (ISi), the developer of Z-RAM high-density memory intellectual property (IP), announced today that it has been selected to exhibit in the Disruptive Zone in booth 3068B at next week's Embedded Systems Conference (ESC) Silicon Valley, April 3-5 at the San Jose McEnery Convention Center. The new Disruption Zone showcases only 16 companies whose products are slated to change the future of the embedded industry with groundbreaking improvements in embedded design or embedded systems performance.
To bISi met all four requirements as its Z-RAM® technology provides up to twice the density of embedded DRAM and up to five times denser than embedded SRAM, making it the world’s lowest-cost semiconductor memory solution. There are no other SRAM or DRAM product offerings that feature only one transistor and zero capacitors. Today, ISi can provide both technology and instance licenses for its patented Z-RAM technology. Last, Z-RAM, with its significant cost, performance, density improvement, is a key reason for utilizing Silicon on Insulator (SOI) for mainstream applications.
Beyond exhibiting at ESC, the company is being recognized by IEEE Spectrum Magazine as having the winning semiconductor technology for 2007 in an awards luncheon on April 3 at the Fairmont in San Jose. That evening, Dr. Serguei Okhonin, ISi’s chief scientist and co-founder, will be recognized by EE Times’ as an ACE Award Innovator of the Year Finalist. One winner will be named that night.