Conference optimistic at tackling CMOS variability

Speakers at Europe’s second international conference on CMOS variability reached the consensus that by working together and applying new working practices, industry could and would evolve to successfully tackle the challenges presented by CMOS variability at leading edge process geometries. Hosted at Savoy Place, London by The National Microelectronics Institute (NMI), in collaboration with the UK’s nanoCMOS Consortium, ICCV 2009 “Living with Variability” attracted expert speakers from around the world and an international audience representing chip designers, manufacturers and tool vendors.