BCD8sP smart-power technology now available for prototyping

Reflecting the growing importance of state-of-the-art power integration in the drive for higher performance in computing, consumer and industrial applications of the future, this is the first time ST has released BCD design capability to third parties.

Claudio Diazzi, Sense & Power and Automotive Sector, Front-End Manufacturing and Technology R&D, Vice President, Smart Power Technologies, STMicroelectronics, comments: "We expect CMP to help us identify and support innovative projects, and hopefully establish long-term connections with talented designers and research organisations."

The most advanced of ST’s Bipolar-CMOS-DMOS (BCD) technologies in production, the BCD8sP process enables the integration of analogue and logic circuitry with high-voltage power components to produce single-chip devices for complex power-conversion and control applications. The process has enabled ST to leapfrog its competitors in important smart-power applications such as HDD controllers, motor controllers and PMICs for equipment such as smartphones, tablets and computer servers.

“With ST’s world-class BCD process in our portfolio, we can now provide even stronger support for advanced smart-power design projects. Many top universities worldwide have already taken advantage of the collaboration between CMP and ST. About 300 projects have been designed in ST’s 90nm process, more than 350 in bulk 65nm and already over 50 projects prototyped in 28nm FD-SOI (Fully-Depleted Silicon-On-Insulator),” commented Jean-Christophe Crebier, Director, CMP.

The introduction in CMP’s catalogue of ST’s BCD8sP process builds on the successful collaboration that has allowed universities and design firms to access leading-edge and previous bulk CMOS generations including 28, 65 and 130nm. CMP’s clients also have access to 28nm FD-SOI and 130nm SOI (Silicon-On-Insulator), as well as 130nm SiGe processes from STMicroelectronics.