25V technology boosts efficiency in leadless package for servers
Alpha and Omega Semiconductor have introduced the AONX38168, the newest generation of its XSPairFET leadless package. It claims that the latest generation 25V technology sets a new industry standard for high power density applications.
The AONX38168 offers the lowest on-state resistance and best Figure of Merits (Rdson x Qg), making it suitable for server and telecommunications applications and for new designs to operate at higher switching frequencies, says the company.
The device includes a low-side and high-side MOSFET in a leadless surface mount package. The package outline measures 5.0 x 6.0mm.
The AONX38168 uses 25V n-channel MOSFET technology and the XSPairFET includes the low-side and high-side MOSFET in a leadless surface mount package. A typical application is a synchronous DC/DC converter.
The MOSFET is designed with the latest bottom source packaging technology which has a lower switch node ringing due to lower parasitic inductance. It offers a higher power density comparative to existing solutions, claims the company, and is well suited for server and telecommunication markets.
The XSPairFET has bottom source connection for the low-side MOSFET which can result in improved thermal performance, simplified layout, and reduced EMI, claims the company.
The AONX38168 is immediately available in production quantities with a lead-time of 12 to 14 weeks.
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