GaN-on-SiC transistors zero in on IFF applications

27th April 2018

Mick Elliott

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Datasheet

The QPD1025L gallium nitride (GaN) on silicon carbide (SiC) transistors from Qorvo are available at Mouser Electronics. Operating with 1.8kW at 65V, the devices deliver high signal integrity and extended reach essential for L-band avionics and identification friend or foe (IFF) applications.

The proven performance and reliability of GaN technology makes it an ideal choice for infrastructure, defense and aerospace applications such as radar, communications, navigation, and similar applications.

The increased performance capabilities offer designers the flexibility to reduce board space and system costs while improving system performance.

The Qorvo QPD1025L is a high-electron-mobility transistor (HEMT) that supports both pulsed and continuous wave (CW) operations to more efficiently offer performance comparable to silicon-based LDMOS devices. Powered from a 65V rail, the device offers 22.5dB linear gain and a typical power-added efficiency (PAE_3dB) of 77.2%.

It features internal input prematch, which simplifies external board match and saves board space.

The lead-free, RoHS-compliant transistor is supported by the QPD1025L evaluation board.