'World's first' 256Gb, 48-layer 3D stacked flash BiCS device
Toshiba has launched its latest generation of Bit Cost Scalable (BiCS) FLASH, a 3D stacked cell structure flash memory. Toshiba hails the device as the ‘world’s first’ 256Gb, 48-layer BiCS device, deploying industry-leading 3-bit-per-cell Triple-Level Cell (TLC) technology. BiCS FLASH is based on a leading-edge 48-layer stacking process that surpasses the capacity of mainstream two dimensional NAND Flash memory while enhancing write/erase reliability endurance and boosting write speeds.
The 256Gb device is suited for diverse applications, including consumer SSD, smartphones, tablets and memory cards, and eSSD for data centres.
Since announcing prototype BiCS FLASH technology in June 2007, Toshiba has continued development towards optimisation for mass production. To meet further growth in the Flash memory market in 2016 and beyond, Toshiba is proactively promoting migration to BiCS FLASH by rolling out a product portfolio that emphasises large capacity applications, such as SSD.
Toshiba has a long-standing commitment to flash memory, and is currently readying for mass production of BiCS FLASH in a new Fab2 at Yokkaichi Operations, its production site for NAND flash memories. Fab2 will be completed in the first half of 2016.
Sample shipments will start in September 2015.
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