F-RAMs family ranges up to 4Mbit devices

19th December 2014

Mick Elliott

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Datasheet

Mouser Electronics is now stocking Parallel F‑RAM Non-Volatile Memory from Cypress Semiconductor. The family of Ferroelectric Random Access Memories (F-RAMs) read and write just like conventional SRAM while retaining data when power is removed just like Flash memory. These highly-reliable F-RAMs feature a variety of interface and density options, are available in memory sizes ranging up to 4 Mbit, and provide data retention for up to 151 years.

The Parallel F‑RAM Non-Volatile Memory can be used as a drop-in replacement for any standard SRAM with the advantage of retaining data when power is removed. All F‑RAM cells are inherently low power and operate without a charge pump. The Cypress F‑RAM memory cells feature an extremely high-endurance rate of 100 trillion read/write cycles while maintaining low-energy consumption.

They are resistant to data corruption from gamma radiation and offer high immunity to electromagnetic interference (EMI). They feature fast write timing combined with high write endurance and NoDelay writes making them suitable for non-volatile memory situations.

All products within the family of F‑RAMs are fully RoHS-compliant and operate at an industrial temperature rating of -40°C to +85°C. Available memory sizes range from 64kbit to 4Mbit, with supply voltages ranging from 3.3V to 5V. Cypress F‑RAMs are an ideal solution for low-power, non-volatile memory applications, including those found in the automotive, industrial, computing, networking, smart meter, and multifunction printer markets.