Eight megabit FRAM an alternative for SRAMs

30th August 2018

Fujitsu

Alex Lynn

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Datasheet

An eight megabit FRAM with the highest density up to date, is being launched by Fujitsu. The MB85R8M2T memory is a suitable solution to eliminate batteries for SRAM in industrial machinery. It is particularly suitable for applications where high data throughput is required and data integrity is critical.

Fujitsu‘s new FRAM eliminates the need both of an SRAM and the related backup battery. This allows manufacturers not only to develop more compact designs, but also to save costs for components and maintenance. Compared to an SRAM in a 44-pin TSOP package, the MB85R8M2T saves about 90% of the mounting surface area for memory parts.

With over ten trillion guaranteed read/write cycles, the MB85R8M2T has a much longer life than non-volatile memory EEPROMs from competitors. Thus, it is ideally suited for industrial applications that require frequent data rewriting, such as real-time data logging and 3D position data logging.

Due to its wide supply voltage range from 1.8 to 3.6V and the SRAM-compatible parallel interface, the FRAM can be flexibly integrated into designs.

The MB85R8M2T is already in mass production in a 48-pin FBGA package with very small dimensions of eight by six millimetres, samples can be requested from Rutronik as of now.