GaN power stage optimises reliablity of power supplies

With an integrated gate driver and robust protection features, the 600V, 50-milliohm device allows designers to achieve new levels of efficiency in their power conversion systems, including in high-density industrial and consumer power supplies, high-voltage battery chargers, solar inverters, and multi-level converters.

The TI LMG341xR050 GaN power stage provides multiple advantages over silicon MOSFETs, including ultra-low input and output capacitance, low switch-node ringing to reduce EMI, and zero reverse recovery to reduce switching losses by up to 80%.

The device's integrated gate driver supports 100 V/ns switching with near-zero Vds ringing, while trimmed gate bias voltage ensures reliable switching by compensating for threshold variations.

A unique set of features allows designers to optimise the performance and reliability of any power supply, including dense and efficient topologies such as totem-pole power factor correction (PFC) structures.

Robust protection features require no external protection components.

The device offers overtemperature protection and transient overvoltage immunity, as well as under voltage lock out (UVLO) protection on all supply rails.

It features overcurrent protection with less than 100ns response, in addition to slew rate immunity of greater than 150V/ns.