Industry’s first space-grade 200V GaN FET gate driver

This family of gate drivers includes the industry’s first space-grade GaN FET driver that supports up to 200V operation. The devices are available in pin-to-pin compatible ceramic and plastic packaging options and support three voltage levels. TI’s advancements in space-grade power products enable engineers to design satellite power systems for all types of space missions using just one chip supplier.

Why it matters

Satellite systems are growing increasingly complex to meet the demand for more on-orbit processing and data transmission, higher-resolution imaging, and more precise sensing. To improve mission capabilities, engineers strive to maximise electrical power system efficiency. TI’s new gate drivers are designed to accurately drive GaN FETs with fast rise and fall times, improving power-supply size and density. This allows a satellite to more effectively use the power generated by its solar cells to perform mission functions.

“Satellites perform critical missions, from providing global internet coverage to monitoring climate and shipping activity, enabling humans to better understand and navigate the world,” said Javier Valle, product line manager, Space Power Products at TI. “Our new portfolio enables satellites in low, medium and geosynchronous earth orbits to operate in the harsh environment of space for an extended period of time, all while maintaining high levels of power efficiency.”

For more information, read the technical article, “How you can optimise SWaP for next-generation satellites with electronic power systems.”

More details

Optimising size, weight and power (SWaP) using GaN technology can:

• Improve electrical system performance
• Extend mission lifetimes
• Reduce satellite mass and volume
• Minimise thermal management overload

Designers can use the family for applications spanning the entire electrical power system:

• The 200V GaN FET gate driver is suitable for propulsion systems and input power conversion in solar panels