X-FAB Silicon Foundries SE has announced the appointment of Jörg Doblaski as its new Chief Technology Officer (CTO). He fills the role of former CTO Dr. Jens Kosch, who is becoming an X-FAB Fellow and will serve as an adviser to the company’s CEO Rudi De Winter.

In order to address heightening demands, X-FAB Silicon Foundries has taken steps to simplify the integration of microfluidic elements with CMOS and SOI dies. Part of its extensive MEMS-oriented technology offering, the company is now able to provide a large variety of process capabilities for silicon- based microfluidic systems.

X-FAB, along with technology partner EUROPRACTICE, have announced the winning project in their competition to encourage further MEMS-based innovation. The triumphant project, entitled ‘Capacitive MEMS Sensors for High-Resolution Interactive Vibrotactile Displays’, was submitted by a team of engineers from the University of Bath.

X-FAB Silicon Foundries SE continues to drive the adoption of silicon-carbide technology forward by offering SiC foundry services at the scale of silicon.

X-FAB Silicon Foundries SE, the leading analogue/mixed-signal and specialty foundry, has announced the availability of new medium-voltage transistors – complementing the company’s leading 180nm BCD-on-SOI technology platform (XT018). The new medium voltage devices cover voltages from 12 to 32V. With that customers now have access to a complete portfolio of different voltage options – covering a ten to 200V voltage range.

  X-FAB Silicon Foundries SE has announced that it is broadening the scope of its cooperation with the EUROPRACTICE Consortium which counts high profile institutions such as Fraunhofer Institute for Integrated Circuits and imec as members.

X-FAB Silicon Foundries has announced that its high-voltage 180nm CMOS semiconductor process (XH018) is now available for automotive applications via the company’s production facility in France. This is a major step in X-FAB’s plan to offer dual sourcing for all its 180nm processes (in both CMOS and SOI), so that continuity of supply is always assured.

X-FAB has announced the availability of new high voltage primitive devices targeted at the growing market for automotive 48V board net and Battery Management System (BMS) ICs. Covering voltages of 70-125V, these complementary NMOS/PMOS devices are based on the company’s XT018 BCD-on-SOI platform with Deep Trench Isolation (DTI) and support for automotive AEC-Q100 Grade 0 products.

X-FAB Silicon Foundries continues to develop semiconductor solutions to address the most difficult of design challenges. It has now announced the availability of Avalanche Photodiode (APD) and Single-Photon Avalanche Diode (SPAD) products for implementation in scenarios where there are extremely low light conditions to contend with and augmented sensitivity is required, as well as tight timing resolutions involved.

Analog/mixed-signal and specialty foundry, X-FAB Silicon Foundries, together with crowd-sourcing IC platform partner Efabless Corporation, have announced the successful first-silicon availability of the Efabless RISC-V System on Chip (SoC) reference design. This open-source semiconductor project went from design start to tape-out in less than three months using the Efabless design flow based on open-source tools. 

Analog/mixed-signal and specialty foundry, X-FAB Silicon Foundries, has announced the full volume production release of its new high temperature galvanic isolation semiconductor process. This proprietary technology is fully automotive qualified, and offers greater reliability levels compared to options offered by the competition.

  X-FAB Silicon Foundries has announced plans to double their 6" Silicon Carbide (SiC) process capacity at its fab in Lubbock, Texas in response to increased customer demand for high efficiency power semiconductor devices.

The availability of a new galvanic isolation process technology that enables the fabrication of robust and reliable high voltage signal isolation solutions, has been announced by X-FAB Silicon Foundries. According to the company, the new process achieves best-in-class isolation performance. By leveraging it, X-FAB’s customers will be able to design their own capacitive or inductive couplers for a wide range of applications. ...

Analogue/mixed-signal and MEMS manufacturer, X-FAB Silicon Foundries, has announced that it is the first semiconductor foundry whose manufacturing sites are certified for automotive manufacturing according to the new IATF-16949:2016 International Automotive Quality Management System (QMS). The certification is acknowledged as the industry’s highest standard of system and process quality for automotive suppliers.

Two new Non-Volatile Memory (NVM) IP solutions have been announced by X-FAB - a low power embedded Flash (eFlash) IP block and a NVRAM compiler. Both are based on the company’s proprietary 180nm XH018 mixed-signal CMOS technology and are targeted at applications requiring high reliability and field re-programmability while operating at low power and in harsh environments.

  Based on the company’s proprietary 180nm XH018 mixed-signal CMOS technology, X-FAB has announced the expansion of its low-noise transistor portfolio. Three new transistors are now available: a 1.8V low-noise NMOS, a 3.3V low-noise NMOS and a 3.3V low-noise PMOS – all of which offer drastically reduced flicker noise compared to standard CMOS offerings.

 X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have demonstrated mass-production capability to manufacture highly efficient high-voltage power devices on 200-mm GaN-on-silicon wafers using X-FAB’s standard CMOS production facility in Dresden, Germany.

In order to drive further ingenuity in IC development, X-FAB Silicon Foundries and efabless have announced the launch of an open mixed-signal design challenge. The objective of this challenge is to give designers across the globe, of all levels of experience, the opportunity to deliver a completed design IP for an ultra-low power voltage reference. The IP will be developed in X-FAB’s 350nm mixed-signal process with designers being granted a...

Advancing semiconductor technology, X-FAB Silicon Foundries has reached another important milestone in the establishing of the world’s first semiconductor foundry to support 6-inch silicon carbide (SiC) production. The company, in collaboration with the U.S. Department of Energy (DOE) and the PowerAmerica Institute, has just deployed a high temperature implanter at its facility in Lubbock, Texas.

As a result of insolvency proceedings, X-FAB Silicon Foundries has announced that it will acquire the assets of Altis Semiconductor, a specialty stand alone foundry located in the Greater Paris area.