Frequency

RF gallium nitride transistor operates up to 2700 MHz

20th July 2023
Mick Elliott
0

Richardson RFPD is offering availability and full design support capabilities for a new RF-power, gallium nitride transistor from NXP Semiconductors.

The MMRF5018HSR5 is a 125-watt, continuous wave, RF power transistor optimised for wideband operation up to 2700 MHz.

It includes input matching for extended bandwidth performance.

Key features include:

  • High power density
  • Decade bandwidth performance
  • Enhanced thermal resistance packaging
  • Power gain: 12.0 dB
  • Drain efficiency: 64.4% (typ.)
  • High ruggedness: > 20:1 VSWR

With its wideband capabilities, high gain, ruggedness and drain efficiency, the MMRF5018HSR5 offers a complete solution for multiband communication applications.

It is also versatile for a range of CW, pulse and wideband RF applications.

An evaluation board is available.

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