Wideband transistor extends GaN portfolio
The NPT2022, launched by MACOM at IMS in Phoenix, is a wideband transistor optimised for DC-2GHz operation and built using a proprietary Gallium Nitride (GaN) on Silicon (Si) process. The device supports CW, pulsed and linear operation, boasting output levels up to 100W or 50dBm. This device provides customers 20 dB of gain and 60% drain efficiency at 900MHz when operated at 50V.
This HEMT D-Mode transistor is available in an industry standard plastic package with bolt down flange. It is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.
“The NPT2022 features advanced RF performance in a plastic package powered by MACOM’s unique GaN on silicon technology,” said Gary Lopes, Senior Product Director, MACOM. “The technical performance of MACOM’s NPT2022 complements our expanding GaN portfolio, which offers the industry the best performance, gain, efficiency and low cost products available on the market.”
Production quantities and samples of the NPT2022 are available from stock.
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