Low noise amplifiers provide 13.5dB of gain

These gallium arsenide (GaAs) pHEMT MMIC devices deliver low power consumption, high linearity, low noise figures and various fixed-gain optionsfor use in a variety of applications.

The devices provide 13.5dB of gain, a 2dB noise figure, a 26.5 dBm output third-order intercept (IP3), and 14.5 dBm of output power at the 1 dB compression point (P1db) and operate from a 5V supply voltage.

They require only a single positive supply to achieve a drain current of 67mA.

The amplifiers include a second gate bias voltage pad for gain control to allow designers to change the gate bias of the upper FETswithin the range of -2 V through +2.6 V.

Features include 50Ohm internally matched and DC-blocked RF input and outputs to help facilitate integration into multichip modules.

Both the inputs and outputs are AC-coupled, but have a large resistor to ground for electrostatic discharge (ESD) protection.

Designed for excellent linearity at high output power, the HMC8400 maintains good heat dissipation and high reliability at elevated temperatures.

The devices are for use in a broad array of RF applications that include test instrumentation, microwave radios and very small aperture terminals (VSATs), military and space equipment, telecommunications and fibre optics.