L & S amplifiers specifically suited to military radar

Pasternack’s new high gain amplifier modules are optimized for 1.2 – 1.4 GHz and 3.1 – 3.5 GHz radar applications, packaged in hermetically-sealed metal enclosures and exhibit outstanding performance in high gain, gain flatness, high output power and low noise. These RF amplifiers utilize a hybrid microwave integrated circuit design and advanced GaAs pHEMT technology to produce an unconditionally stable module. They are also designed with built-in voltage regulation, bias sequencing, and reverse bias protection for added reliability and over-voltage protection is installed externally for easy repair. A total of six new L and S band high gain amplifiers are offered in this latest release from Pasternack.

Two of those products are low noise amplifiers (LNA) which demonstrate noise figure performance of 1.1 dB to 1.5 dB at high gain levels of 40 dB typical gain while also exhibiting excellent gain flatness. Also offered are 10 Watt and 20 Watt high power amplifiers that have exceptional gain performance of 40 – 47 dB with 1.0 dB to 1.5 dB gain flatness. Pasternack is also releasing an L-band driver amplifier that displays solid gain performance of 47 dB while delivering competitive gain flatness of 1.5 dB.

“The introduction of our new GaAs-based high gain amplifiers provides our customers a comprehensive portfolio of amplifier solutions for use in the L and S frequency bands for commercial and military radar applications”, says Michael Rachlin, Active RF/microwave Products Manager at Pasternack. “The rapid growth of our active component product lines illustrates Pasternack’s new strategy to become a leading supplier of active products in the availability market.”

The new 1.2 – 1.4 GHz and 3.1 -3.5 GHz high gain amplifiersfrom Pasternack are in stock and available to ship the same-day.