Frequency
IDT Introduces Accurate All-silicon CMOS Oscillator
Integrated Device Technology today announced the all-silicon CMOS oscillator, which achieves an industry-leading 100ppm total frequency error across temperature, voltage and other factors.
“With its sub-100ppm total frequency error, the IDT3C02 is a major breakthrough in the timing industry” said Fred Zust, vice president and general manager of the Communications division at IDT. “An ideal choice over crystal alternatives, it expands on the all-silicon CMOS oscillators in wafer forms announced earlier this year and extends the IDT timing leadership.”
The IDT3C02 oscillator generates highly accurate frequencies on chip without relying on a piezo-electric or mechanical resonator. Built on a standard, readily available CMOS process, the device utilizes a programmable architecture and supports various configuration options to suit a broad range of applications. Perhaps most critical among these options is the frequency of operation, which is programmed by the factory and allows for shorter lead times, including unique or uncommon frequencies, compared with traditional quartz solutions.
In addition, the IDT3C02 oscillator is designed with a unique analog core, which consumes less than 2.5mA (unloaded, typical), and thus offers a lower power alternative to high frequency quartz- and PLL-based oscillators while delivering best-in-class -140dBc/Hz phase noise at 1MHz offset from carrier. The device is offered in industry-standard quartz crystal-compatible package of 5x3.2mm, but eliminates the need for hermetically sealed ceramic packaging and instead utilizes low-cost and thin-profile MSL1 plastic IC packaging.
The IDT3C02 also features a 200nA (typical) low power stand-by mode, and fast start-up time of 100us (typical). The combination of these features makes it ideal for power-sensitive designs and allows for frequent power cycling for further power savings. Because the device contains no moving elements and generates the frequencies electronically instead of using mechanical or piezo-electronic resonance, the all-silicon, monolithic implementation leads to excellent shock and vibration resistance.