GaN RF power transistors suit cellular base stations

26th May 2016

Nat Bowers

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NXP Semiconductors has announced an expansion to its portfolio of 48V GaN RF power transistors optimised for Doherty power amplifiers for use in current and next-gen cellular base stations. The four new transistors collectively cover cellular bands from 1,805 to 3,600MHz, meeting the needs of wireless carriers for superior performance at higher frequencies.

With the wireless spectrum shortage, wireless carriers are exploring higher frequencies to accommodate the exponential annual increases in traffic. These networks require RF power transistors and amplifiers that deliver higher performance over wider signal bandwidths, as well as higher efficiency and ruggedness, higher output power and smaller footprints.

The four GaN transistors are specifically designed to meet these challenges. The transistors have high efficiency, gain and ruggedness with the ability to deliver their rated performance with an impedance mismatch (VSWR) greater than 10:1. These transistors, designed for use in Doherty power amplifiers, are optimised for seamless integration with digital predistortion linearisation systems.

The A2G22S251-01S ultra wideband symmetrical Doherty two device solution covers 1,805 to 2,170MHz (365MHz bandwidth). In a symmetric Doherty, it delivers an average RF output power of 71W (450W peak), gain of 16.5dB and drain efficiency of 46% in concurrent multiband operation at 8dB back-off configured. The part is housed in a NI-400S-2S air-cavity ceramic package.

The A2G26H281-04S is NXP’s first in-package Doherty transistor covering 2,496 to 2,690MHz. It offers average RF output power of 50W (288W peak), gain of 15.3dB and drain efficiency of 57% configured in a NI-780S-4L air-cavity ceramic package.

The A2G35S160-01S and A2G35S200-01S two-transistor Doherty amplifier solution covers 3,400 to 3,600MHz with 53W average RF output power (331W peak), gain of 13.8dB and drain efficiency of 46%. Each of these transistors is housed in a NI-400S-2S air-cavity ceramic package.

Paul Hart, Executive Vice President and General Manager, RF power business unit, NXP, commented: “Cellular customers are actively pursuing GaN technology especially in higher frequency bands. Given its leadership in the cellular base station market, NXP is committed to being a dominant source of top-quality GaN products. Our new transistors fully harness the inherent strengths of GaN enabling broad bandwidth, efficient and compact solutions.”

NXP’s GaN RF power transistors are either sampling or in production. Optimised reference designs are available.