GaN on SiC HEMTs designed for defence applications
Availability and full design support capabilities are now being offered by Richardson RFPD for four new GaN on SiC high-electron-mobility transistors from Qorvo. The QPD1000 is a 15 W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT that operates from 30MHz to 1.215GHz.
The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimise power and efficiency for any region within the band.
The CW- and pulse-capable device is housed in a 5 mm x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios. It is also suitable for radar and jammer systems.
The QPD1003 is a 500W (P3dB) internally-matched discrete GaN on SiC HEMT that operates from 1.2 to 1.4 GHz and a 50 V supply rail.
The device is GaN IMFET fully-matched to 50Ω in an industry-standard air cavity package and is ideally suited for military and civilian L-band radar applications.
The device can support pulsed and linear operations.
The 125W (P3dB) QPD1008L and 65 W (P3dB) QPD1015L are wideband unmatched discrete GaN on SiC HEMTs that operate from DC to 3.2GHz and DC to 3.7GHz, respectively, and a 50 V supply rail.
The devices are in industry-standard air cavity packages and are suitable for military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The devices can support pulsed, CW and linear operations.
They are also available in flangeless packages (QPD1008 and QPD1015).
Evaluation boards for the new devices are available.
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