Frequency
NXP Introduces eXtremely Rugged XR LDMOS RF Power Transistors
Designed for the toughest engineering environments, NXP Semiconductors N.V. has unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed tough-as-nails to withstand the harsh fault conditions often found in applications such as industrial lasers, metal etching and concrete drilling. Based on NXP’s industry-leading LDMOS technology, the XR family extends LDMOS into the few remaining domains that are serviced by VDMOS and bipolar transistors today.
Sudd“Our new eXtremely Rugged family offers best-in-class ruggedness, opening new markets for RF power that were previously unthinkable. The mismatch test, where we’ve demonstrated that the BLF578XR can survive a VSWR of 125:1, speaks for itself. To further demonstrate just how rugged the XR is, we’ve taken this one step further to replicate a host of extreme fault conditions, and have found no impact on the performance of the BLF578XR. We welcome RF power engineers to see this for themselves - at IMS2011, in our ‘Unbreakable’ video and in their own labs,” said Mark Murphy, director of RF power products, NXP Semiconductors. “As a leading volume supplier with over 15 years in this market, NXP is continuing to push the boundaries in high performance radio frequency technology by delivering leading performance LDMOS with VDMOS-like ruggedness and without any added cost structure.”
The new BLF578XR is an extremely rugged version of NXP’s ubiquitous BLF578, an RF power transistor workhorse for a multitude of broadcast and ISM applications. In most applications, the BLF578XR will be a simple plug-in replacement for the BLF578.
The BLF578XR features NXP’s most advanced LDMOS technology, and is designed for applications where extreme ruggedness is required.
* Frequency range: 0 to 500 MHz
* Gain: 24 dB at 225 MHz
* Efficiency: 70 % at 225 MHz
* VSWR: 125:1 at 1200 W through all phases
* Peak output power: 1400 W (pulsed)
* Thermally enhanced: 0.14 K/W