Frequency
Freescale Announce New LDMOS And GaN Power Transistors
Freescale Semiconductor introduce the latest additions to its flagship family of Airfast RF power solutions: three LDMOS power transistors and one gallium nitride transistor, all designed to exceed stringent land mobile market requirements for exceptional ruggedness. The new Airfast LDMOS power transistors deliver a compelling combination of stability, gain and ruggedness.
The Freescale’s new AFT09MS007N, AFT09MP055N and AFT09MS015N LDMOS power amplifiers are engineered to perform flawlessly in extreme operating conditions, delivering exceptional performance, stability and gain for land mobile radio applications. These devices are ideal for mobile VHF, UHF and 700-900 MHz transceivers used in public safety, professional mobile radio and other harsh machine-to-machine communications environments.
The three new Airfast RF LDMOS power products are designed to survive >65:1 VSWR, even with simultaneous over voltage and overdrive stressing the amplifier and its RF power transistors. They integrate much of the circuitry required to maintain stability, thereby simplifying design and supporting stability under a wide range of operation conditions. Accompanied by a comprehensive range of reference designs and requiring only a few inductors and capacitors to complete the design, Freescale’s newest LDMOS Airfast RF power products for the land mobile market deliver better efficiency and linearity, in a similar footprint, than module-based solutions. Additionally, Airfast RF power devices typically have 65 percent or more efficiency, significantly more than modules and competitive discrete devices.
“Until now, engineers have faced significant challenges in developing multi-band systems that are large, complex and expensive to design,” said Ritu Favre, senior vice president and general manager of Freescale’s RF business. “The latest additions to our Airfast RF power portfolio enable exceptional broadband performance to land mobile designers, all within an ultra-compact footprint.”
For radio operators and public safety personnel, the ability to communicate with multiple agencies is critical to taking rapid, organized and efficient action during emergency situations. The broadband performance of Freescale’s new Airfast AFG30S010 GaN device allows a single power amplifier to support many land mobile bands, eliminating the need to design large, expensive and complex multi-band systems for multi-agency communication. Offering high efficiency and advanced thermal performance, the AFG30S010 GaN device provides the functionality to deliver a reduced amplifier footprint, critical to meeting customer demands for smaller product form factors.
Product specifications
The new Airfast LDMOS devices operate from a nominal 7.5 Vdc supply for handheld radio applications and a 12.5 Vdc supply for mobile radio applications, while integrating ESD protection. The Airfast GaN device operates from a 28 Vdc supply.
AFT09MS007N, AFT09MP055N, AFT09MS015N
-Survives > 65:1 VSWR with simultaneous over voltage and overdrive
-Optimized system reliability for lower maintenance costs
-High power gain needs fewer stages and improves stability
-High efficiency for simplified cooling and smaller radios
AFG30S010
-10 W across entire 136-941 MHz frequency band
-Survives > 20:1 VSWR with simultaneous over voltage and overdrive
-Improved system reliability with lower maintenance costs
-Elimination of complex protection circuits, which reduces overall system cost
-High efficiency across a wide frequency range
Availability
The AFT09MS007N 7 W and AFT09MP055N 55 W devices are planned for production in Q2 2013. Sample quantities of the AFT09MS015N 15 W and AFG30S010 devices are planned for Q4 2013. Reference designs and other support tools are available to design engineers.