50W GaN amplifier enables smaller footprint
Availability and full design support capabilities for a new 2.8–3.2GHz 50W GaN Amplifier from Qorvo are announced by Richardson RFPD. The QPA1000 is a high-power, S-band amplifier fabricated on Qorvo’s QGaN25 0.25um GaN on SiC production process. The device provides greater than +47 dBm of saturated output power and greater than 24dB of large-signal gain, while achieving more than 58% power added efficiency.
It can also support a variety of operating conditions and system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under pulse applications.
The QPA1000 is matched to 50 Ohms, with integrated DC blocking caps on both I/O ports. It is ideal for use in commercial and military radar systems.
According to Qorvo, key features of the QPA1000 include:
- Pout: > +47 dBm (PIN = +25 dBm)
- Large Signal Gain: > 22 dB (PIN = +25 dBm)
- PAE: > 58% (PIN = +25 dBm)
- Bias: VD = 25V, IDQ = 200 mA, VG = −2.8V (Typical)
The devicesupports long pulse operation and has package dimensions of 7mm x 7mm x 0.85 mm
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