20W Pin-diode switch designed for X-Band applications

The device is an innovative solution which offers customers low insertion loss of 0.8 dB as well as high isolation performance of 37 dB for their high power applications. The MASW-010647integrates a bias network to allow for simplified bias application and switch control. The device is also fabricated using MACOM’s patented HMIC process, which allows for the integration of silicon pedestals that embed series and shunt diodes in low loss, low dispersion glass. This very small chip-scale solution benefits customers by smaller size, lower number of components, and improved yield and repeatability.

“The MASW-010647 has been designed for customers who require a small-size, integrated solution with high power handling in conjunction with low insertion loss” said Paul Beasly, Product Manager, Aerospace & Defense. “The combination of integrated bias networks +/-5V operation, and excellent performance at 20 W of CW power, makes this device an excellent candidate for high power applications such as X-Band radar.”