Power and energy management products on show at electronica

Utilising the latest SiC and Si technologies, proprietary processing and packaging technologies, these devices maximise efficiency and compactness, paving the way for cost and component reduction while delivering optimum performance. Combining ROHMs knowhow in analogue and digital power technology, they represent the most advanced developments of ROHM’s global R&D centers and joint designs with industry partnerships. All these products are manufactured in the company’s fully owned, vertically integrated production sites. Among others, key topics will include 3^rd Gen SiC MOSFETs, Schottky Barrier Diodes (SBDs) and Modules, LED-drivers for exterior lighting, Design Kits for wireless power delivery and the technology partnership with Formula E-car developer Venturi.

Product highlights:

SiC Technology – 3^rd Gen SiC MOSFETs, SiC SBDs and Modules
Utilising a proprietary double trench gate structure, ROHM’s  generation of SiC MOSFETs reduces ON-resistance by 50% and input capacitance by 35% in the same chip size compared with planar-type SiC MOSFETs. Optimum performance is achieved by combining low loss with high-speed switching performance. As a result, conversion efficiency is improved, contributing to increased miniaturisation, weight reduction, and greater energy efficiencies.

The 3^rd Gen of SiC Schottky Barrier Diodes (SBD) realise lowest Forward Voltage (VF) and lowest reverse leakage current (lR) over the entire temperature range among all of the SiC SBDs currently available on the market. In addition to this, they feature high surge current capability which can be used for power supply applications. Adding to the recently announced TO220AC devices at 650V/6, 8 and 10A, ROHM will introduce D2pak devices also adding lower current options, 2 and 4A to the family. ROHM’s full SiC modules including a chopper type module for converters integrating both, Trench SiC MOSFETs and SiC SBDs.

Automotive Exterior LED Lighting
ROHM’s broad range of LED drivers is deployed in many automotive applications for interior as well as exterior lighting. High/low Beam LED headlights, Matrix/Pixel LED dynamic front lights and dynamic sequential turn indicators mark the latest developments in exterior lighting. The company supplies LED drivers for rear lamps and Day Running Lights (DRL). Several application examples demonstrate the benefits, for example a high beam/low beam demo, a DRL example, a Matrix Headlamp and finally two different matrix drivers for a sequential turn system (a stand-alone matrix driver and a matrix driver controlled by an MCU).

Medium Power Design Kit for Wireless Charging Application in Cooperation with Würth Elektronik
Interest in wireless power technology is rapidly growing as it provides a simple, convenient, reliable and safe way to charge and power electronic devices, for example mobile phones and portable computing devices in the home, car and workplace. ROHM Semiconductor has a full family of products targeting low and medium power applications with solutions based on the Qi standard. To showcase its Qi certified medium power solutions, ROHM in collaboration with Würth Elektronik is offering a design kit to demonstrate the advantages of wireless power charging. This gives engineers the opportunity to test and integrate wireless power solutions in their applications whilst accelerating the adoption of new technology in power applications. The kit is built according to the Wireless Power Consortium (WPC) Qi specification 1.2. as the next-generation standard for fast and safe inductive power transmission.

Technology Partnership with Venturi Formula E
Through the recently announced technical Partnership with Venturi who are contesting the FIA “Formula E series” for all-electric powertrain single-seater racing cars, ROHM will display the car and it’s inverter as an application example to demonstrate advances in e-mobility. Under the agreement, the Venturi e-car will be fitted with SiC devices. From season three, this vehicle will include ROHM-manufactured SiC Schottky Barrier Diodes (SBDs) within its inverter system. The goal is to significantly enhance the performance of the powertrain by exploiting the characteristics of SiC to improve energy efficiency and increase power density.