MOSFETs, gate drivers, converters & more on display at PCIM

ROHM’s BD7F100HFN-LB is an optocoupler-less isolated flyback converter. An external isolator like optocoupler or a 3^rd winding from a transformer which is needed in conventional design of feedback circuits becomes unnecessary in order to obtain a stable output voltage isolated by the transformer. Hence, the number of parts and need of space are reduced drastically resulting in a small-sized and high-reliability isolated type power supply solution.

The design uses the original Adapted-Type ON-Time Control Technology to control the output voltage, and external phase compensation parts are not required. ROHM guarantees longevity of supply for this converter in order to address the industrial market.

ROHM has also developed reliable, high-speed isolated gate drivers featuring low power consumption. Their integrated isolation function uses proprietary coreless on-chip transformer technology, which is used in several compact, isolated devices such as gate drivers, temperature detectors, voltage monitors or standalone isolators. The gate driver offers optimised driving in order to leverage the performance of various SiC, IGBTs and power MOSFETs.

The product line-up consists of two families: In addition to ROHM’s BM610xFV series with comprehensive built-in protection functions, the BM6001xFV series features a simpler construction and was designed to advance product development quickly, corresponding to various market needs. Overall, the devices are suited for inverters, DC/DC converters and chargers for EVs, HEVs and PHEVs.

Additionally, ROHM will show its Intelligent Power Module family for power-efficient motor driving and inverter applications, featuring compactness, high integration and high reliability. It combines several components like gate drivers, bootstrap diodes, IGBTs or Power MOSFETs (PrestoMOS), fly wheel diodes as well as various protection functions within one compact HSDIP25 package.

Since these products target various applications ROHM offers optimised versions for low/high speed switching. This offers developers of white goods and industry motors a multitude of cost-efficient design options. Comprehensive protection circuits and fault signal output are integrated as well. The full line-up includes 10A,15A, 20A and 30A versions of 600V IGBT-IPMs.

In the SiC area, ROHM will present its 1200V and 650V SiC MOSFETs based on a Trench Gate structure and is also preparing SiC MOSFETs with breakdown voltage of 1700V. Compared to conventional planar MOSFETs, the Trench MOSFETs reach about half of the same RDS_(ON) over the whole temperature range, while the stability of the Gate oxide film and of the Body Diode remains as high as with ROHM’s 2^nd gen SiC MOSFETs.

Reverse recovery behaviour has been drastically reduced. In principle, there is no tail current during switching, resulting in faster operation and reduced switching loss by 30%. The result is higher reliability and increased current-carrying capacity at reduced cell density and minimum conductivity while keeping a compact format. ROHM MOSFETs suit use in Switch Mode Power Supplies, Renewable Energy Inverters/Converters, EV/HV inverters and chargers.