GaN demos 60A power transistor in China for first time

The GS65516T 650V E-mode power switch features GaN Systems’ proprietary top-side cooling configuration, which allows the device to be cooled using familiar and conventional heat sink or fan cooling techniques. It is based on the company’s ultra-low FOM Island Technology die design, packaged in low inductance and thermally efficient GaNPX packaging and measures 9.0x7.6x0.45mm.

Additional features of the GS65516T 650V E-HEMT include reverse current capability, integral source sense and zero reverse recovery loss. Dual gate pads help design engineers achieve optimal board layout. The GS65516T suits high frequency, high efficiency power conversion applications such as on-board battery chargers, 400V DC/DC conversion, inverters, UPS and VFD motor drives, AC/DC power supplies (PFC and primary) and VHF small form factor power adapters.

Girvan Patterson, President, GaN Systems, commented: “GaN is real and happening right now. Our devices boast industrial-scale power and since becoming available commercially last year, hundreds of leading companies across the globe have embraced our technology to make sure they are among the first to market with new products that bring the benefits of GaN to products ranging from solar inverters to ultra-slim TVs. The major players are well aware that gallium nitride device technology is a true game-changer. GaN Systems’ core IPs make our devices easier for designers to work with and we are now seeing real products that harness GaN’s power come to market. For example, on our stand here at PCIM Asia, we are showing a new 3kW, 800/380V DC/DC converter developed by NextHome, a consortium of manufacturers developing new power systems for domestic use which improve energy efficiency. We are also showing a 5kW 3-phase inverter power module from LS Industrial Systems of Korea with 2-level topology which uses two of our GS66508P devices in parallel.”