GaN enhancements on the agenda at RF/Microwave PA Forum

Free to attend, the RF/Microwave PA Forum is segmented into four sequential sessions designed to foster discussion about and provide insight into the latest approaches to device models, measurements for parameter extraction, process technologies, and modern power amplifier design flow and theory.

In this presentation, Dr. Harris will discuss the latest enhancements to the models, which enable advanced harmonic engineered designs, as well as address how the extreme accuracy of Cree GaN HEMT models under a broad range of operating conditions can be used to replicate the exact behaviour of the devices in high frequency circuits.

Already proven to be a critical asset to the development of many hundreds of successful hybrid and MMIC designs, Cree’s enhanced large signal models enable even more first pass design successes, preserving both critical design cycle time and financial investments.