CEA-Leti to present silicon successes at OFC 2015

6th March 2015

CEA / Leti

Siobhan O'Gorman

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At OFC 2015, which takes place from 22^nd to 26^th March in Los Angeles, CEA-Leti will present updates on its silicon photonics technology, including its results on ‘Heterogeneously integrated III-V on silicon distributed feedback lasers at 1310nm’ and hybridisation of electronic and photonic ICs.

In addition, Hughes Metras, the company’s Vice President for Strategic Partnerships in North America, will participate in a panel discussion on ‘State of the Market/Industry: 2014 in Review’, which will take place at 12:30pm on Tuesday 24^th March in the Exhibit Hall. Metras’ topic is ‘The Promises of Silicon Photonics: Current Status and Future Trends’. Leti staff will be available at booth No. 635 in the Exhibit Hall to answer any questions.

Leti will be joined by AEPI, Invest in Grenoble-Isere. AEPI provides complimentary information, introductions and services to assist companies in exploring business opportunities in the Grenoble area of France.

The silicon photonics results will be presented in two presentations at the conference:

Monday 23^rd March, 4:30pm

Room 411

Session: DSP-based Optical Access

Within the frame of the FABULOUS EU project, Leti has developed photonics ICs and integrated them with electronics ICs from STMicroelectronics by means of 3D micro-bumps. The FABULOUS project aims at demonstrating the effectiveness of a self-coherent reflective FDMA WDM PON architecture, achieving record transmission performances and demonstrating an ONU made up with CMOS electronic ICs and silicon photonic ICs.

Tuesday 24^th March, 6pm

Room 409AB

Session: Lasers & Multiwavelength Transmitters

Title: ‘Heterogeneously Integrated III-V on Silicon Distributed Feedback Lasers at 1310nm’

Within the frame of the IRT-Nanoelec French Program, CEA-Leti develops and matures the heterogeneous III-V/ Si integration technology and edge lasers and modulators based on it: this paper will present the performances of hybrid III-V on silicon distributed feedback lasers at 1310nm. Continuous wave regime is achieved up to 55°C, with room-temperature threshold of 35 mA, while mode-hope-free operation with side- mode suppression ratio above 55dB is measured.

In addition, the company will present a poster at 10am on Wednesday 25^th March, in the Exhibit Hall. As advanced modulation formats are considered for implementation in next gen transceivers for short transmissions, Leti has developed test bench for OFDM-direct detection and PAM transmissions. The poster will report on a PAM-4 transmission established by modulating a Si-RRM with a 2Vpp driving voltage. A 20Gb/s bit-rate was achieved with an 8GHz bandwidth, and maintained while the Si-chip temperature was varied from 35 to 90°C.