Displays solutions for industrial and automotive applications

The X-GaN devices overcome key technical challenges typically faced by GaN power devices: X-GaNs are normally-off, current collapse free, use an ohmic gate contact preventing gate breakdown, all factors dramatically improving the reliability and robustness in application.

Panasonic will showcase industrial subsystems that can take full advantage of X-GaN's high performance such as a X-GaN compact inverter and a DCDC converter, as well as a range of application demonstrators and evaluation kits.

Johannes Spatz, EVP Industrial Business, Panasonic Industry Europe comments: “Panasonic has developed high efficiency, compact GaN power devices with low heat generation suitable for different applications such as power supplies, HEV/EV and PV inverters and many others. Our GaN transistors and applications have become mass production items, demonstrating our broad range of options for different applications and our position at the forefront of this fast-moving market."

At PCIM, Panasonic is showcasing its SiC MOSFET solutions. It’s DioMOS (Diode-integrated SiC MOSFET) structure enables SiC modules to be reduced in size, by integrating a high performance unipolar reverse diode in the channel of the MOFSET.

SiC power devices can realise low-loss operation that surpasses silicon power devices and play a key role in saving energy in high current, high voltage applications. At PCIM 2018 Panasonic will showcase prototypes of power modules with built-in SiC-DioMOS.

Panasonic advanced electro-materials contribute to improving the reliability and reducing the size of power electronics and automotive parts. Encapsulation materials for SiC or GaN power devices exhibit excellent heat resistance and can suppress cracks and delamination of resin-encapsulated parts thanks to a high glass transition temperature and high thermal stability.

Reinforcement materials used to improve mounting reliability, especially in automotive applications.