CVD materials enable 300+ mm diameter component manufacture

8th July 2014

Siobhan O'Gorman

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A range of materials grown using CVD (chemical vapour deposition) processes has been introduced by Morgan Advanced Materials. Morgan's CVD SiC (Silicon Carbide) and PBN (Pyrolytic Boron Nitride) are suitable for use in semiconductor applications such as rapid thermal processing and plasma etch process chamber components.The materials are also suited for use in metalorganic CVD tools for high-brightness white LED manufacturing, using the indium gallium nitride process.

Morgan Advanced Material's CVD SiC growth capability enables the manufacture of 300+ mm diameter components with thicknesses of more than 10mm at production volumes for recently developed plasma etch applications. With access to ultrasonic machining capability, the company offers high tolerance CNC machining and precision hard grinding and a patented Rmax process for producing focus CVD SiC ring shapes.

The SiC material has high thermal conductivity, is resistant to chemical erosion, and features minimal particulate generation. The material is suited for use in producing GDMs (gas distribution plates) where the material’s erosion resistance can lead to long life and extended tool PM schedules. Ultrasonic drilling can provide holes with diameters as small as 0.5mm.

The PBN materials have a working temperature in excess of 1500°C, and feature high electrical resistivity and high dielectric strength. Extremely low out-gassing, non-wetting, and non-toxic, the materials are inert to most acids, alkalis and organic solvents and have high thermal conductivity in the “a” direction. These materials are suited for manufacturers of PBN coated graphite heaters and PBN effusion cell components.