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French
19th July 2010
Toshiba Electronics introduit un circuit de commande de DEL 9 canaux à courant avec interface bus I2C

Toshiba Electronics Europe (TEE) vient d'étendre sa gamme de circuits de commande de DEL de haute précision avec un modèle 9 canaux qui présente une interface bus I2C et une capacité de courant constant en sortie pouvant atteindre 50mA par canal.

French
14th July 2010
Toshiba Electronics étend sa famille de composants périphériques mobiles avec un circuit d'affichage hub/bridge compatible MIPI®

Toshiba Electronics Europe (TEE) vient d'étendre sa famille de circuits intégrés MPD (circuits périphériques mobiles) en introduisant une solution compacte, de faible consommation et versatile qui peut être mise en œuvre en mode hub ou bridge dans des applications conçues autour des plus récents standards MIPI® (Mobile Industry Processor Interface) série haute vitesse.

Pending
14th July 2010
Toshiba Electronics expands mobile peripheral device family with MIPI® display hub/bridge

Toshiba Electronics Europe has expanded its family of mobile peripheral device (MPD) ICs with a versatile, compact and low power product that can operate as a hub or a bridge in applications built around the latest high-speed serial MIPI (Mobile Industry Processor Interface) standards.

Optoelectronics
9th July 2010
Toshiba Electronics announces 9-channel constant current LED driver with I2C bus interface

Toshiba Electronics Europe has expanded its range of high-accuracy LED drivers with a nine-channel device that features an I2C bus interface and a constant current output drive capability of up to 50mA per channel.

Analysis
25th June 2010
Toshiba Electronics expands IC coupler line-up with high-speed SDIP6 devices offering 5000Vrms isolation

Toshiba has announced two new high-speed photocouplers that deliver isolated switching in accordance with international safety standards in packages that are half the size of 8-pin DIP alternatives with the same performance. The new 6-pin SDIP (shrink DIP) TLP715 and TLP718 photocouplers are ideal for applications such as isolated bus drivers, high-speed line receivers and microprocessor system interfaces. Offering maximum switching speeds of ju...

Analysis
24th June 2010
Toshiba and Trek Establish Forum to Promote SD Cards

Toshiba today announced the launch of an industry forum to promote a new SD card that integrates Wi-Fi wireless communication with data storage capabilities. The forum, the Standard Promotion Forum for Memory Cards Embedding Wireless LAN has been founded by Toshiba and Singapore-based Trek 2000 International Ltd.

French
18th June 2010
Toshiba introduit les modules mémoires à Flash NAND avec la plus forte densité mémoire de l'industrie

Toshiba Corporation annonce ce jour l'introduction d'un module de mémoire Flash NAND embarquée de 128 Go, soit la plus haute densité atteinte jusqu'ici dans l'industrie. Le module est totalement compatible avec le plus récent standard e•MMCTM, et a été conçu pour servir dans une vaste gamme de produits numériques pour le grand public comme les téléphones intelligents, les PC au format tablette et les caméras vidéo numériques. Des Ã...

Memory
17th June 2010
Toshiba Claims Industry’s Largest Embedded NAND Flash Memory Modules

Toshiba announced the launch of a 128-gigabyte (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry. The module is fully compliant with the latest e•MMCTM standard, and is designed for application in a wide range of digital consumer products, including smartphones, tablet PCs and digital video cameras. Samples will be available from September, and mass production will start in the fourth quarter (October to...

Pending
16th June 2010
Toshiba develops leading-edge silicon nanowire transistor for 16nm generation and beyond

Toshiba Corporation announced that it has developed a breakthrough technology for a nanowire transistor, a major candidate for a 3D structure transistor for system LSI in the 16nm generation and beyond. The company has achieved a 1mA/μm on-current, the world’s highest level for a nanowire transistor, by reducing parasitic resistance and improving the on-current level by 75%. This is a major step towards practical application of nanowire tr...

Analysis
9th June 2010
SPiDCOM chooses Toshiba ASIC and mixed-signal IP technology for dual-core HomePlug AV SoC

SPiDCOM Technologies, the French fabless semiconductor company specializing in integrated circuits and Linux-based software bundles for Multimedia Home Networking, has used Toshiba’s 90nm CMOS ASIC platform, mixed-signal IP and European technical support services to develop its first HomePlug AV system-on-chip (SoC).

French
2nd June 2010
Toshiba Electronics annonce un régulateur de tension numérique programmable

Toshiba Electronics Europe (TEE) vient d'introduire un convertisseur continu-continu de type step-down hautement intégré qui occupe un espace réduit, améliore le rendement et augmente la flexibilité de conception des solutions de puissance PoL (point-of-load). Portant la référence TC7750FTG, ce régulateur de tension programmable combine un driver PWM et des FET avec une boucle retour et un contrôleur dans un seul boîtier compact.

Power
2nd June 2010
Toshiba Electronics Announces Programmable Digital Voltage Regulator

Toshiba Electronics Europe has launched a highly integrated digital DC-DC step-down converter that will save space, improve efficiency and increase the design flexibility of point-of-load (PoL) power designs. The new TC7750FTG programmable voltage regulator combines a PWM driver and FETs with controller and feedback loop in a single, compact package.

Power
26th May 2010
Toshiba announces new 60V-2.5A n-channel MOSFET for battery voltage boosting

Toshiba Electronics Europe (TEE) has introduced a 60 Volt semi-power MOSFET within its line-up of small signal MOSFET (S-MOS) devices. The new SSM3K318T is ideally suited for battery voltage boosting in white light emitting diode (LED) backlight applications. The common load switching application in portable devices can be operated from the battery voltage with low voltage MOSFETs of 20V maximum rating. However for LED backlighting applications w...

French
26th May 2010
Toshiba annonce un nouveau MOSFET 60V-2,5A à canal N pour booster la charge des batteries

Toshiba Electronics Europe (TEE) introduit un MOSFET de semi-puissance 60 V dans sa gamme de MOSFET (S-MOS) petits signaux. Référencé SSM3K318T, ce nouveau transistor est adapté aux applications dotées d'un rétroéclairage à DEL (diode électroluminescente) dans lesquelles il faut booster la charge des batteries. Dans des terminaux portables, une application de commutation en mode commun peut être alimentée à partir d'une batterie avec ...

Design
19th May 2010
Toshiba Electronics Starter Kit Simplifies Prototyping of Embedded Systems for HMI Applications

Toshiba Electronics Europe (TEE) has announced a new starter kit to for the development of applications based on the company’s TMPA90xCMXBG family of ARM9 32-bit microcontrollers with built-in HMI (human machine interface) support.

Automotice Microsite
19th May 2010
Un kit de démarrage de Toshiba Electronics simplifie le prototypage des systèmes embarqués pour les applications HMI

Toshiba Electronics Europe (TEE) vient d'annoncer un nouveau kit de démarrage pour le développement d'applications construites autour des microcontrôleurs ARM9 32 bits de la famille TMPA90xCMXBG, qui intègrent le support HMI (human machine interface).

Optoelectronics
13th May 2010
Toshiba Electronics launches reinforced insulation photocouplers in low-profile SO6 package

Toshiba Electronics Europe (TEE) has expanded its photocoupler portfolio with two new devices that offer ultra-low-profile board mounting in applications requiring isolated switching in accordance with international safety standards.

Optoelectronics
13th May 2010
Toshiba Electronics launches reinforced insulation photocouplers in low-profile SO6 package

Toshiba Electronics Europe (TEE) has expanded its photocoupler portfolio with two new devices that offer ultra-low-profile board mounting in applications requiring isolated switching in accordance with international safety standards.

French
5th May 2010
Toshiba Electronics étend sa gamme de MOSFET de puissance avec des modèles pour montage en surface avec des valeurs de tension atteignant 600 V

Toshiba Electronics Europe vient à nouveau d'agrandir sa famille de MOSFET de puissance en introduisant, cette fois, de nouveaux modèles montables en surface, classés avec des valeurs de tensions atteignant 600 V. Encapsulés dans un boîtier compact DPAK, les nouveaux MOSFET TKxP sont parfaits pour des applications telles que les ballasts d'éclairage, les chargeurs de batteries et autres types d'alimentations exigeant des courants jusqu'à ...

Power
5th May 2010
Toshiba Electronics expands power MOSFET range with surface-mount devices rated to 600V

Toshiba Electronics Europe (TEE) has further expanded its family of power MOSFETs by introducing new surface mount devices with voltage ratings up to 600V. Supplied in a compact DPAK package, the new TKxP MOSFETs will be ideal for lighting ballasts, battery chargers and other power supply applications requiring currents up to 7A.

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