The LMG3522R030-Q1 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

TMDSCNCD28388D is a low-cost evaluation and development board for C2000 MCU series of F2838xS and F2838xD devices. It comes with a HSEC180 (180-pin High speed edge connector) controlCARD, and is ideal for initial evaluation and prototyping.

Drive high-resolution, ultra-wide automotive displays with FPD-Link IV dual video output synchronization features. Synchronous dual DisplayPort output from a single DS90UH984 deserializer or quad-OLDI from synchronized dual deserializers can drive multiple, co-located panels to support pillar-to-pillar automotive displays.

The TMS320F2838x (F2838x) is a member of the C2000 real-time microcontroller family of scalable, ultra-low latency devices designed for efficiency in power electronics, including but not limited to: high power density, high switching frequencies, and supporting the use of GaN and SiC technologies.

USB Type-C continues to be found in a widening spectrum of power delivery and connectivity applications, though it is largely known as the new, faster charging standard for laptops, tablets and smartphones.

Texas Instruments (TI) has introduced the industry’s first 650V three-phase GaN IPM (Integrated Power Module) for 250W motor drive applications on the opening day of the PCIM exhibition in Nuremberg (June 11-13).

The LMG3624 is a 650-V 170-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3624 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

90-A peak continous-current synchronous-buck NexFET smart power stage.

The LMG2610 is a 650-V GaN power-FET half bridge intended for < 75-W active-clamp flyback (ACF) converters in switch mode power supply applications. The LMG2610 simplifies design, reduces component count, and reduces board space by integrating half bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9-mm by 7-mm QFN package.

Electronics are continuing to evolve how we interact with our cars. We have come a long way from the time when integrated navigation or hands-free calling were considered new, exciting features.

The automotive industry is evolving rapidly as it goes through an electrification transformation.

The LMG3522R030-Q1 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

A plug-in hybrid electric vehicle (PHEV) requires a power electronic system between the power grid and the high-voltage battery pack located inside the vehicle.

The CSD95411NexFET power stage is a highly optimized design for use with a high-power, high-density synchronous buck converter. This device integrates the driver IC and power MOSFETs to complete the power stage switching function. 

Bi-directional, dual active bridge reference design for level 3 electric vehicle charging stations

The LAUNCHXL-F28P65X is a low-cost development board for the Texas Instruments C2000 RealTime Microcontroller series of F28P65x devices.

650v 170mΩ GaN FET with integrated driver, protection and current sensing.

Development kit for rapid prototyping featuring the TMS320F28P650DK9 microcontroller.

A traction inverter converts the EV battery’s high-voltage DC to the AC that the electric motor needs. The traction inverter controls the speed and torque of the motor, and its efficiency has a direct impact on the power and thermal dissipation, as well the EV’s driving range.

Up to 2× Dual-core Arm Cortex-R5F MCU subsystems operating at up to 800 MHz, highly integrated for real-time processing.