Richardson RFPD
- 40W267 Keslinger Road
P.O. Box 307
LaFox,
Illinois
60147-0307
United States of America - (630) 208-2700
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Richardson RFPD Articles
SiC power MOSFET coes in four-lead TO-247-4 package
A new silicon carbide power MOSFET from Wolfspeed is available with full design support capabilties from Richardson RFPD. The 1200 V, 75 mΩ C3M0075120K features Wolfspeed’s C3M SiC MOSFET technology and is available in an optimised four-lead TO-247-4 package with a separate driver source pin.
Richardson adds SiC MOSFETS from Wolfspeed, optimised for renewable energy
PCIM Europe 2017 Stand 6-333Distributor Richardson RFPD now stocks the C3M0120100K silicon carbide (SiC) MOSFET from Wolfspeed, a Cree company.
Richardson RFPD to sponsor GaN workshop at EDI CON
Richardson RFPD is sponsoring the Electronic Design Innovation Conference (EDI CON) 2017 GaN Panel workshop. EDI CON 2017 will be held at the Shanghai Convention & Exhibition Center of International Sourcing in Shanghai, China (April 25-27). Richardson RFPD's GaN Panel is scheduled for Wednesday, April 26, 14:50 to 15:30 (local time).
Gate driver device family range from 2.5A to 8A
The SCALE-iDriver family of integrated circuits from Power Integrations is available at Richardson RFPD along with full design support capabilities. The new ICs are galvanically-isolated single-channel gate driver devices that range in output current from 2.5A to 8A, the industry’s highest output current without an external booster.
IGBTs boast SoLid Cover) technology in low-profile package
A family of power IGBTs in the new VINco E3 package from Vincotech are available at Richardson RFPD with full design support capabilities. The VINco E3 package features SLC (SoLid Cover) technology in an industry-standard low-profile package. It enables engineers to design mid-power inverters with higher output current, higher power density and improved reliability for motion control, industrial drives, solar power, UPS and other mid-power applic...
Embedded cellular module provides device to cloud architecture
An embedded cellular module from Sierra Wireless is available at Richardson RFPD with full design support capabilities. The WP8548 is part of Sierra Wireless’ AirPrime WP Series, which provides an integrated device-to-cloud architecture enabling IoT developers to build a Linux-based product on a single module and seamlessly send valuable user and product data to the cloud.
Power solutions head for APEC 2017 in Tampa
At APEC 2017 in Tampa, Florida (March 27-29), Richardson RFPD will highlight a wide range of innovative technologies from the world's leading suppliers of applied power electronics solutions. Featured on the company stand will be ADI drivers for wide bandgap technologies, featuring low propagation delay and cost/size reductions versus opto-coupler solutions, and Astrodyne EMI filters (single-phase, 3-phase, DC, COTs and custom designs) for virtua...
SiC MOSFET driver reference design optimised for desaturation protection
A new SiC MOSFET driver reference design from Microsemi is available at Richardson RFPD supported by full design support capabilities. The MSCSICMDD/REF1 is designed to provide a reliable reference driver solution, a means of evaluating silicon carbide MOSFETs in a number of different topologies, as well as a means to assess device performance for parametric test purposes.
Multiband antenna slash design cycle times
Availability and full design support capabilities have been announced by distributor Richardson RFPD for the latest mXTEND SMT multiband antenna from Fractus. The Fractus mXTEND antenna boosters leverage Fractus’ Virtual Antenna technology to reduce design cycle times by replacing time-consuming, high-NRE custom antenna solutions with miniature, standard, off-the-shelf components.
MOSFET-based evaluation board cuts design costs
A new evaluation board from Wolfspeed, a Cree Company is available at Richardson RFPD. The CRD-060DD17P-2 is a demonstration board for a single-end flyback converter design built with Wolfspeed’s commercially-available 1700V SiC MOSFET. The 48W experimental reference design demonstrates how the 1700V SiC MOSFET can reduce total cost and simplify the design of auxiliary power supply.
Tuneable bandpass filter operates off 3.3V supply
A new 30–88MHz tunable bandpass filter and associated evaluation board from NewEdge Signal Solutions is available at Richardson RFPD with full design support. The SAX248 is designed for tactical communications applications and operates from a single 3.3 V supply.
50V GaN RF transistors operate from DC to 4GHz
Availability and full design support capabilities for two new GaN on SiC RF transistors from Qorvo have been announced by Richardson RFPD. The new discrete GaN on SiC HEMTs operate from DC to 4GHz. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2GHz, and a linear gain of 24dB at 2GHz.
Power amplifier targets satcomms applications
A new X-band GaN power amplifier from Qorvo has arrived at distributor Richardson RFPD who will also offer full design support capabilities. The TGM2635-CP operates from 7.9 to 11GHz and provides 100W of saturated output power with 22.5dB of large signal gain and greater than 35% power-added efficiency.
Up-converter, down converter options on MMIC fundamental mixers
Availability and full design support capabilities have been announced by Richardson RFPD for two GaAs MMIC fundamental mixers from Analog Devices. The HMC557A is a general-purpose, double balanced mixer in a 24-lead, ceramic 4 mm x 4 mm LCC package that can be used as an up-converter or down-converter from 2.5GHz to 7GHz and requires no external components or matching circuitry.
High-power SMT attenuators cover DC-20GHz
A new series of high-power SMT attenuators from American Technical Ceramics (ATC) is available at distributor Richardson RFPD. The AT0603 Series provides virtually flat loss over a broad frequency spectrum and is ideal where low noise, low inductance and low parasitic capacitance is required.
Boards evaluate GaN E-HEMT performance
Availability and full design support capabilities for a family of evaluation boards from GaN Systems have been announced by Richardson RFPD. The GS665XXX-EVBDB daughterboard evaluation kits consist of two GaN Systems 650 V GaN enhancement-mode HEMTs (E-HEMTs) and all necessary circuits, including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage.
Dual RF transceiver has tuning range of 300MHz to 6GHz
A new integrated, dual RF transceiver from Analog Devices (ADI) is available with design support from Richardson RFPD. ADI's AD9371 is a highly-integrated, wideband RF transceiver offering dual channel transmitters and receivers, integrated synthesisers, and digital signal-processing functions.
Bi-directional coupler delivered in surface mount package
A new bi-directional surface-mount coupler from Innovative Power Products is in stock at Richardson RFPD along with full design support. The IPP-8036 is one of the featured surface-mount products from IPP’s full line of dual directional couplers. It is a 300W, 50dB dual directional coupler that operates from 20MHz to 1000MHz.
UltrasCMOS FET driver enables next-generation applications
Richardson RFPD is now offering availability and full design support capabilities for a new UltraCMOS FET driver from Peregrine Semiconductor. The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as GaN Systems’ E-HEMT (enhancement-mode high electron mobility transistor) gallium nitride FETs.
GaN on SiC HEMTs designed for defence applications
Availability and full design support capabilities are now being offered by Richardson RFPD for four new GaN on SiC high-electron-mobility transistors from Qorvo. The QPD1000 is a 15 W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT that operates from 30MHz to 1.215GHz.