Navitas Semiconductor

El Segundo California
United States of America
http://www.navitassemi.com

Navitas Semiconductor Inc. is the world’s first and only GaN Power IC company, founded in El Segundo, CA, USA in 2013. Navitas has a strong and growing team of power semiconductor industry experts with a combined 200 years of experience in materials, circuits, applications, systems and marketing, plus a proven record of innovation with over 125 patents among its founders. The proprietary AllGaN™ process design kit monolithically-integrates the highest performance 650V GaN FET and GaN driver capabilities. Navitas GaN Power ICs enable smaller, higher energy efficient and lower cost power for mobile, consumer, enterprise and new energy markets. Over 25 Navitas proprietary patents are granted or pending.

Navitas Semiconductor Articles

Displaying 61 - 65 of 65

Latest

16^th December 2021

Navitas announces availability of GaN power ICs

Navitas Semiconductor has announced that high-power GaN power IC samples are now available to data center, solar and electric vehicle (EV) customers worldwide.

Power

11^th February 2021

GaNFast power IC addresses high mobile power market

Navitas Semiconductor has announced the NV6128, a new high-power 650V/800V-rated GaNFast power IC to address the high-power mobile and consumer power electronics market, and take market share from the old, slow, silicon chip.

Analysis

8^th March 2017

First integrated half-bridge GaN IC reduces size, cost and weight

Navitas Semiconductor announces what it believes is the industry’s first integrated half-bridge Gallium Nitride (GaN) Power IC, with the introduction of the NV6250.

Power

13^th February 2017

GaN ICs circuitry reduces frequency-related power losses

Navitas believes it has developed the world’s first GaN power IC, based on its proprietary AllGaN technology.

Power

18^th March 2016

Power ICs integrate GaN FETS and logic

Believed to be the first GaN power ICs, Navitas introduces its ICs, based on its proprietary AllGaN monolithically-integrated 650V platform. They combine GaN power FETs with GaN logic and drive circuits, claimed to enable 10 to 100 times higher switching frequency than exisiting silicon circuits.

First Previous Page 4 of 4 Next Last