Mitsubishi Electric announces sales of Thin Film Transistor Liquid Crystal Display (TFT-LCD) modules for industrial applications in Europe. Business support will be handled through the Semiconductor European Business Group headquarters located in Ratingen, North-Rhine Westphalia in Germany. With the sales of TFT-LCD modules Mitsubishi Electric intends to offer strong support to local European customers.

Mitsubishi Electric has developed new high power laser diodes emitting high-intensity red light with a wavelength of 638nm. The new devices dubbed ML5xx71 and ML5xx54 series are perfectly suited for applications like pico projectors. These new laser diodes provide an output power of up to 300mW respectively 110mW in fundamental mode at continuous wave operation.

Mitsubishi Electric is launching a new IGBT family using the latest 6th generation IGBT chips with advanced CSTBTTM (Carrier Stored Trench Gate Bipolar Transistor) technology and newly developed diode chips for an optimized loss performance.

The new Evaluation Board EVBPS2XA7X from Mitsubishi Electric is specifically developed for design engineers using the 1200V DIPIPM Version 4 (DIPIPMTM: Dual In-Line Package Integrated Power Module) as the Evaluation Board provides users with an image of the system interface.

Mitsubishi Electric will start shipments of its GaAs low-noise HEMT (High Electron Mobility Transistor) MGF4921AM by the end of January 2009. The new GaAs HEMT is highly-suitable for low-noise amplifiers in satellite digital radio reception systems as well as for C band DBS (direct broadcast satellite) receivers.

Offering what the company says is the world’s highest output power of 110mW CW at 638nm in stable lateral single-mode, the new laser diode developed by Mitsubishi Electric Corporation offers the best power performance in its class. It is therefore predestined for use in mobile projectors, laser show equipment, and instrumentation applications as well as in the biomedical fields.

Mitsubishi Electric Corporation has developed a new GaAs HEMT (Gallium Arsenide High Electron Mobility Transistor) for the Ku band (12/14 GHz). The new device, which is named the MGF4935AM, is designed for use as the first stage in low-noise amplifiers of DBS (Direct Broadcast Satellite) receivers and VSAT (Very Small Aperture Terminal) systems. A low noise amplifier’s (LNA) performance depends primarily on the noise characteristics and associa...

In 2008, the German branch of Mitsubishi Electric Europe B.V, based in Ratingen celebrates its 30th anniversary. In addition to a summer event held for around 500 employees and their families on June 20th 2008, an anniversary event for an expected 400 customers and partners is due to be held in October 2008. “For 30 years our German branch has been an essential part of the European business of Mitsubishi Electric. The excellent achievements and...

Mitsubishi Electric Corporation has introduced a high power amplifier with InGaP HBTs (Heterojunction Bipolar Transistors) which is tailored specifically for WiMAX terminal applications. The new device dubbed MGFS39E2527 provides up do 30dBm of output power in the frequency range from 2.5 to 2.7GHz.

Mitsubishi Electric Corporation has introduced a high power amplifier with InGaP HBTs (Heterojunction Bipolar Transistors) which is tailored specifically for WiMAX terminal applications. The new device dubbed MGFS39E2527 provides up do 30dBm of output power in the frequency range from 2.5 to 2.7GHz.

With its new transmitter optical sub assembly (TOSA) series Mitsubishi Electric has developed four 1.3µm band laser modules for optical transmission at speeds of 10Gb/s and, respectively, 8Gb/s. Each individual module fits into an enhanced 8.5 and 10 Gigabit small form factor pluggable module (SFP+) measuring just 13.3mm x 13.4mm x 56.5mm. Compared to XFP (10 Gigabit small factor pluggable module) the SFP+ compliant transceivers are 60 percent...

Mitsubishi Electric is introducing its new Intelligent Power Module (IPM) of the L1-Series featuring high-speed, low-loss IGBT chips with full gate CSTBT (Carrier-Stored Trench Gate Bipolar Transistor). In addition to the mechanical compatibility with existing L-Series IPMs, the L1-Series family covers an additional small package with improved performance.

Mitsubishi Electric has started shipping the first samples of the integrated GaInP HBT (Gallium Indium Phosphide Heterojunction Bipolar Transistor) Amplifier Module MGFS36E2527. GaInP HBT is a technology which up to now has been mainly used in mobile phone applications due to its high efficiency. The new MGFS36E2527 targets WiMAX terminals.

Mitsubishi Electric Europe B.V.'s Semiconductor European Business Group announces a new Single-Chip Inverter for drives of typically 90W, addresses BLDC motor drives solutions, for significant energy savings while simultaneously meeting the specific demands of the white good industry. The new single-chip device named M81500FP, which is rated for 500V/1A, integrates control, drive and protection functionalities as well as IGBTs, freewheeling dio...