M/A-COM Technology Solutions has announced the FBT4821AG, a transmitter optical subassembly (TOSA), and the FBR4102PB, a receiver optical subassembly (ROSA). These devices are optimised for 100G LR4 applications, and targeted for QSFP28, CFP4, CFP2 and CFP form factors.

M/A-COM Technology Solutions has announced the MAOM-006428, the industry’s first 64Gbaud quad-channel linear Mach Zehnder modulator driver. This device will support data rates of 400Gbps and beyond on a single wavelength for long haul communications using coherent technology.

M/A-COM Technology Solutions has announced the MASC-37028 and MASC-37029, dual 28Gbps Clock and Data Recovery (CDR) devices with integrated laser driver. These devices are ideal for SFP28 short reach (SR) or long reach (LR) module applications with flexibility in module design. 

M/A-COM Technology Solutions has announced the MAOP-L284CN, a silicon photonic integrated circuit integrated with lasers (L-PIC) for a 100G transmit solution for CWDM4 and CLR4 applications. To meet the explosive growth of data traffic driven by video and mobile, major Internet content providers, such as Amazon, Microsoft, Google and Facebook, are building hyper-scale datacenters, which require high-speed interconnect solutions that are powe...

M/A-COM Technology Solutions will debut a newly expanded portfolio of optoelectronics and photonic solutions at OFC 2016 in Booth #3101. Leveraging deep domain experience in optical networking, along with a combination of semiconductor technologies, MACOM provides innovative and smart solutions supporting datacenter, client access (NGPON and Mobile front and backhaul), metro and long-haul applications.

M/A-COM Technology Solutions will debut a recently expanded portfolio of wireless infrastructure solutions, the largest of its kind in the industry, at Mobile World Congress (MWC) 2016. Optimised to meet the most demanding bandwidth, performance and efficiency needs, MACOM’s semiconductor solutions for wireless infrastructure set new standards for integration, ease of use and cost effectiveness.

M/A-COM Technology Solutions has announced its highly-anticipated MAGb series of GaN power transistors for use in wireless macro basestations. Leveraging MACOM’s Gen4 GaN technology, the new MAGb series is the industry’s first commercial basestation-optimised family of GaN transistors to achieve leadership efficiency, bandwidth and power gain with a linearity and cost structure like LDMOS and a path to better than LDMOS cost at scaled...

The Massachusetts Institute of Technology’s Lincoln Laboratory (MIT LL) has selected the Scalable Planar ARray (SPAR) Tile technology, from M/A-COM Technology Solutions Holdings, for use in a test bed for the US Defense Advanced Research Projects Agency’s (DARPA) Arrays at the Commercial Timescale (ACT) programme.

M/A-COM Technology Solutions has announced the availability of its complete chipset for CWDM and PSM4 applications in the datacentre. The chipset includes the complete lineup of electronic and optical ICs to achieve the lowest power consumption in a QSFP28 form factor. As mega-datacentres continue to expand to service the demand for high-speed data communications, the volume of 100G transceivers is expected to grow exponentially with the par...

A quad channel linear modulator driver with 46GBd capability to support next generation 200G and 400G applications has been released by M/A-COM Technology Solutions. The MAOM-003427 is the latest addition to the company’s extensive portfolio of driver solutions for optical infrastructure enables system designers to address higher baud rate applications with lower cost surface mount technology.

MACOM and the Massachusetts Institute of Technology (MIT) Lincoln Laboratory have announced successful field tests of Multifunction Phased Array Radar technology (MPAR). The first MPAR–based system was successfully deployed by the National Severe Storms Laboratory in Oklahoma.

A wideband transistor optimised for DC-2.7GHz operation has been introduced by M/A-COM Technology Solutions. The NPT2024, which uses MACOM’s proprietary Gallium Nitride on Silicon (GaN on Si) process, is now sampling. The device supports CW, pulsed and linear operation, boasting output levels up to 200W.

A wideband transistor optimised for DC to 2.7GHz operation and built using proprietary 4th generation GaN on Silicon (GaN on Si) process is sampling today. The device was announced by MACOM at European Microwave Week in Paris. This GaN on Si HEMT D-Mode transistor is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.

M/A-COM Technology Solutions has announced the MAAP-011246, a 2W power amplifier, and the MAAP-011139, a 4W power amplifier in a SMT package. These four-stage, fully matched power amplifiers are suited for Ka-Band SATCOM applications and provide linearity for either final power amplification stages or driver stages in higher power applications.

Designed for GPON Optical Network Unit (ONU) equipment, the M02027 TIA has been introduced by M/A-COM Technology Solutions (MACOM). The device enables GPON receivers to utilise lower cost PIN photodiodes while offering performance margin in the stringent GPON BOSA-on-Board environment. Offering outstanding power dissipation, the TIA delivers high sensitivity with PIN photodiodes and wide dynamic operating range.

M/A-COM Technology Solutions will showcase its complete and robust portfolio of laser diodes, laser drivers, CDRs, detectors and TIAs covering FTTx to 100G and beyond at CIOE (China International Optoelectronics Exhibition) 2015, 31st August to 3rd September at the Shenzhen Convention and Exhibition Center in Shenzhen, China.

The NPT2022, launched by MACOM at IMS in Phoenix, is a wideband transistor optimised for DC-2GHz operation and built using a proprietary Gallium Nitride (GaN) on Silicon (Si) process. The device supports CW, pulsed and linear operation, boasting output levels up to 100W or 50dBm. This device provides customers 20 dB of gain and 60% drain efficiency at 900MHz when operated at 50V.

4th gen GaN on Si (Gallium Nitride on Silicon) technology, which delivers greater than 70% peak efficiency and 19dB gain for modulated signals at 2.7GHz, has been introduced by M/A-COM Technology Solutions (MACOM). This is similar to GaN on SiC technologies and more than 10% greater efficiency than LDMOS.

M/A-COM Technology Solutions has introduced a high linearity 6W power amplifier, suited for Ka-band high data density satcomms and 5G radio access networks. MACOM’s MAAP-011140-DIE is offered as a bare die, delivering 24dB of linear gain, 6W of saturated output power and 23% power-added efficiency. The device provides greater than 25dBm POUT/tone while maintaining IM3 levels of 30dBc.

A wideband amplifier boasting an operating frequency range of DC-50GHz, the MAAM-011109-DIE, has been introduced by M/A-COM Technology Solutions. This amplifier provides customers with 50Ω matching and typical return losses of 15dB. This user friendly amplifier is a high-performance, low noise solution for customers seeking a wideband, fully matched amplifier solution.