Researchers at Toyota Central R&D Labs describe the first all solid-state wavelength-dependent bipolar photodetectors with fast response times and tunable switching wavelengths. The findings are reported in Applied Physics Express.

Researchers at Hokkaido University describe a novel method of making high quality vertical nanowires with full control over their size, density and distribution over a semi-conducting substrate. The findings are reported in the Japanese Journal of Applied Physics. This research is featured in the August 2016 issue of the JSAP Bulletin.

Research reported in the Japanese Journal of Applied Physics describes the development of a simple ‘bimorph’ strip just millimetres in length size, which converts heat into mechanical energy at temperatures below 100 °C, and under a temperature difference of as little as 5 °C; and a way to produce hydrogen at the highest efficiency yet, using a combination of concentrator photovoltaic (CPV) modules and electrochemical (EC) cel...

Graphene, a flat sheet of graphite just one carbon atom thick, displays unique optical and electronic properties for use in future devices. In particular, graphene is nearly transparent to light and other EM waves, making it useful for LCDs and LEDs. However, some researchers want to make graphene absorb more EM radiation so that other proposed applications, such as photodetectors and solar cells, can be realised.

Satoshi Yamakawa and co-workers at Mitsubishi Electric have developed a new power module made from an SiC MOSFET and an SiC Schottky barrier diode. As reported in the Japanese Journal of Applied Physics, the team successfully trialed the module in a train traction inverter – a device used to convert the direct current from the power source to three-phase alternating current suitable for driving the propulsion motors – with promising r...

Low resistance resulting in reduced power consumption and heating have attracted researchers to study GaN systems for nanoelectronics. Previous work has focused on laterally oriented GaN and AlGaN transistors, which readily provide a high mobility and low resistance. However, these structures are limited in terms of the break-down and threshold voltage that can be achieved without compromising device size, which may make them unsuitable for autom...