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Fairchild Semiconductor

Fairchild Semiconductor Articles

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Power
30th August 2006
600V MOSFETs suit the latest ultra-slim, low-profile ballast applications

Fairchild Semiconductor has developed a family of low on-resistance 600V SuperFET MOSFETs specifically to address the DPAK (TO-252) device requirements of the latest ultra-slim, low-profile ballast applications. To minimize switching and conduction losses and meet system efficiency needs of these fast-switching lighting designs, Fairchild’s DPAK SuperFETs offer as little as one-third the on-resistance (0.6 ~ 1.2 Ohms) of traditional planar MOSF...

Passives
23rd August 2006
New Devices offer 15kV ESD and Superior EMI for Portable Applications

Fairchild has introduced key enhancements to its µSerDes technology. Using the same footprint and base architecture as its popular predecessor, the FIN24AC, the new FIN224AC offers enhanced ESD protection and reduced EMI.

Analysis
10th August 2006
Fairchild Semiconductor Power Expert to Present System Efficiency Techniques at Upcoming IPEMC Conference

Fairchild Semiconductor power expert Alan Elbanhawy will present two papers on how to achieve system power efficiency at IPEMC 2006. A premier power electronics and motion control event, the conference will be held August 13-16 in Beijing, China.

Analysis
22nd July 2006
Fairchild Semiconductor Technologist to Present Techniques for Minimizing System Power Losses at the 2006 Maple Conference

Fairchild Semiconductor power expert Alan Elbanhawy will present the paper “Parasitic Gate Resistance and Switching Performance” at the Maple Conference 2006 in Waterloo, Canada, July 23-26. This conference draws worldwide experts to offer insights and techniques in the effective and novel application of Maplesoft technology in their respective fields.

Power
28th June 2006
1200V/15A NPT-Trench IGBT can withstand as much as 300mJ

Fairchild Semiconductor has introduced a 1200V/15A NPT-Trench IGBT with the ability to withstand as much as 300mJ of avalanche energy in induction heating (IH) applications. This excellent avalanche capability helps ensure “rugged” fail-safe operation of the system during abnormal avalanche-mode conditions that commonly affect IH appliances such as microwave ovens

Power
14th June 2006
4x4mm Dual-Band Power Amplifier from Fairchild Saves Space, Extends Range in WLAN Applications

Building upon its established portfolio of WLAN power amplifiers, Fairchild Semiconductor has introduced its FMPA2151, a highly integrated dual-band WLAN power amplifier module optimized to increase performance and reduce PCB board footprint in the latest 802.11a/bg WLAN applications, including notebooks, digital cameras and portable handsets.

Analysis
8th June 2006
Fairchild Semiconductor Opens Global Power Resource™ Design Center in South America to Address Critical Markets

Brazil Design Center to assist customers in the region by offering on-site design solutions for their automotive, lighting, motor drive, telecom and consumer electronics applications

Power
30th May 2006

Fairchild Semiconductor has expanded its Smart Power Module portfolio by adding 50 and 75A-rated Motion-SPM devices targeting 5kW to 7.5kW commercial and industrial inverter motor designs. Fairchild now offers designers SPM products covering the full inverter motor power range from 50W to 7.5kW.

Analysis
17th May 2006
Fairchild will Introduce RF Solutions for WCDMA Handset and WLAN Computing Applications at IMS 2006

Fairchild Semiconductor will display its solutions for RF wireless applications in booth 1041 at the upcoming International Microwave Symposium (IMS) conference. Fairchild’s comprehensive WLAN power amplifier solutions cover the entire spectrum of WLAN bands 802.11 a/b/g/n, while offering strong performance advantages such as high linearity, low current consumption, high levels of integration and ultra-compact packaging. Fairchild’s suite of...

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