Cambridge GaN Devices (CGD) has announced that independent, third-party research by Virginia Tech University demonstrates that the CGD’s ICeGaN GaN technology is more reliable and robust than other GaN platforms.

Cambridge GaN Devices (CGD) has announced the second in its series of webinar tutorials targeting designers, engineers and managers who are evaluating gallium nitride (GaN) power devices. At 6pm CET on Tuesday 14th March, CGD's Chief Technology Officer, Professor Florin Udrea will present on 'State-of-the-art architectures and future concepts in GaN technology for power electronics'. A Q&A session will follow.

Cambridge GaN Devices (CGD) is presenting a new series of webinar tutorials, targeting designers, engineers and managers who are evaluating gallium nitride (GaN) power devices for their next activity. During this series, CGD's GaN experts will share their insights on GaN for efficient power conversion and how CGD's HV technology, ICeGaN, enables ease of use and delivers the highest performance. In the first instalment, 'Powering up The Future wit...

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, has signed an agreement with IFP Energies nouvelles (IFPEN), a major French public research and training organisation in the fields of energy, transport and the environment, to develop an innovative automotive inverter using advanced GaN devices.

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, announced that its IceGaN smart HEMT, monolithically-integrated power solutions are now available for volume shipment. More, industry’s first easy-to-use and scalable 650V GaN HEMT family is also expected to be verified as industry’s most rugged GaN platform.

Cambridge GaN Devices (CGD), the fabless semiconductor company that was spun out of the power device group at the Engineering Department of the University of Cambridge in 2016, has raised $19m in Series B funding. 

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, and Neways Electronics (Neways), the international innovator in electronics for smart mobility, semiconductor and connectivity solutions, will sign an agreement to develop high efficiency, photovoltaic solar inverter products based on gallium nitride technology at electr...

Cambridge GaN Devices (CGD), a semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, will participate for the first time at electronica where the company will take part in the conference proceedings as well as show GaN devices and discuss strategic partnerships.

Cambridge GaN Devices debuts first commercial products at APEC with sustainability-driven 650 V ICeGaN H1 series

Fabless semiconductor company Cambridge GaN Devices (CGD) has launched ICeData, a project aiming to develop and commercialise a highly efficient Gallium Nitride (GaN)-based IC (integrated circuit) for use in data centre server power supplies.

Cambridge GaN Devices (CGD) has raised $9.5m in Series A funding. The investment was co-led by IQ Capital, Parkwalk Advisors and BGF, and includes investment from Foresight Williams, Cambridge Enterprise, Martlet Capital, Cambridge Angels and Cambridge Capital Group. The funding will be used by CGD to expand its product portfolio of energy efficient power devices and to double the size of its team.