Black Sand Technologies has extended its established BST34 series of CMOS power amplifiers with two new devices that complete its range of products for use in every common global cellular frequency band. The new BST3405 and BST3408, for use in Band-5 (824-849MHz) and Band-8 (880-915MHz) respectively, are drop-in replacements for the gallium-arsenide components traditionally found in every 3G mobile phone, tablet and datacard.

Black Sand Technologies, Inc. today announced that it has been selected to provide silicon PA technology for integrated RF front end products by Murata Manufacturing Co, Ltd. The products will be used to increase integration and improve the performance of 3G smartphones, tablets and datacards.

Black Sand Technologies, Inc, has strengthened its senior management team with the appointment of Richard Murphy as Vice President of Worldwide Sales. With over 15 years of experience in selling and marketing semiconductor solutions into the wireless terminal market, Mr Murphy has a strong track record in sales and business development, particularly in the Asia-Pacific (APAC) region.

Black Sand Technologies, Inc today announced that it has received US$10 million in third-round (series C) funding, as it ramps volume production of its range of silicon power amplifiers for use in 3G phones, tablets and datacards. The latest funding round was led by existing investors Northbridge Venture Partners and Austin Ventures.

Black Sand Technologies, Inc, a fabless semiconductor company specializing in advanced power amplifier technology for wireless applications, has launched two new 3G CMOS RF power amplifier (PA) product lines that significantly improve the reliability and data throughput of mobile phones, tablets and datacards. The product lines consist of six unique power amplifiers across multiple frequency bands.

Black Sand Technologies, Inc., a specialist in advanced power amplifier technology for wireless applications, today announced that it previously acquired a patent portfolio related to CMOS power amplifiers (PAs) from Silicon Laboratories.

Black Sand Technologies, Inc., a fabless semiconductor company specializing in advanced power amplifier technology for wireless applications, today announced that it has produced what it says is the world's first 3G CMOS RF Power Amplifier (PA). Black Sand's proprietary CMOS PA architecture offers a breakthrough in combined performance, cost, battery life, and reliability for mobile devices such as mobile phones and datacards. The company also ...