Navitas launches third-gen SiC MOFSETs

Navitas’ unique ‘trench-assisted planar’ technology offers exceptional performance across a wide temperature range, providing high-speed and efficient operation ideal for electric vehicle (EV) charging, traction systems, and DC-DC converters. These Gen-3 Fast SiC MOSFETs deliver case temperatures up to 25°C lower than conventional devices, extending operating life by up to three times in the demanding conditions of EV environments.

Optimised for rapid switching speeds and maximum efficiency, the Gen-3 Fast MOSFETs also enhance power density for EV applications such as AC compressors, cabin heaters, DC-DC converters, and on-board chargers (OBCs). Navitas’ EV Design Centre has showcased leading OBC system solutions up to 22 kW, achieving 3.5 kW/litre power density and over 95.5% efficiency.

The new 650 V Gen-3 Fast MOSFETs, with RDS(ON) ratings between 20 and 55 mΩ, are designed for 400 V EV battery systems, while the 1,200 V range, with ratings from 18 to 135 mΩ, is tailored for 800 V architectures.

Both the 650 V and 1,200 V ranges are AEC Q101-qualified and available in the D2PAK-7L (TO-263-7) SMT package. For 400 V EVs, the 650 V-rated TOLL package offers several advantages, including a 9% reduction in junction-to-case thermal resistance (RTH,J-C), 30% smaller PCB footprint, 50% lower profile, and 60% reduced size compared to the D2PAK-7L.

This facilitates high power density solutions, while the package’s minimal inductance of just 2 nH ensures excellent fast-switching capabilities and minimises dynamic package losses.