Cypress Expands Serial nvSRAM Portfolio With New I2C And Second-Generation SPI Devices in Densities from 64kb to 1Mb

Cypress’s nvSRAMs are manufactured on its S8™ 0.13-micron SONOS (Silicon Oxide Nitride Oxide Silicon) embedded non-volatile memory technology, enabling superior reliability and improved performance. nvSRAMs are ideal solutions for applications requiring absolute non-volatile data security such as Electronic Smart Meters, PLCs, Motor Drives, Electronic Data Recorders in Automobiles, RAID systems, Medical and Data Communication Systems.

The new Serial nvSRAM family includes 1-Mbit, 512-Kbit, 256-Kbit and 64-Kbit devices in multiple configurations. These devices feature superior performance with an industry-first SPI operating frequency up to 104MHz, SPI Modes 0 and 3, infinite READ/WRITE and RECALL cycles with 20 years of data retention. These devices are available in industry-standard small footprint 8-SOIC and 16-SOIC packages.

“Our customers have encouraged us to add these serial interface products to our existing parallel nvSRAM product portfolio because nvSRAM is a viable, high-volume CMOS based solution,” said Jithender Majjiga, Senior Director of the Non-Volatile Products Business Unit at Cypress. “Competing solutions tend to use non-standard process technologies and struggle to maintain a consistent source of supply. With a robust flexible supply chain and high quality manufacturing, Cypress is well positioned to address the high volume serial market.”

A leader in SONOS process technology, Cypress is using the S8 technology in next generation PSoC® mixed-signal arrays, programmable clocks and other products. SONOS is compatible with standard CMOS technologies and offers numerous advantages including high endurance, low power, and radiation hardness. Cypress’s S8™ 0.13-micron SONOS technology is qualified to run in its internal fab and in multiple foundry partner locations. SONOS technology provides a superior solution in terms of scalability and manufacturability compared to other magnetic or ferroelectric based non-volatile memory technologies.