Analysis

TSMC Qualifies Magma's QCP Extractor for 28-nm Designs

14th July 2011
ES Admin
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Magma Design Automation today announced TSMC has included the QCP extractor in TSMC’s quarterly EDA qualification report for 28-nanometer (nm) integrated circuits (ICs). This qualification gives designers additional confidence in using QCP to address the increasing complexity of ICs implemented in TSMC’s 28-nm processes.
New device structures and the growing number of metal layers used at the 28-nm node are introducing many additional parasitic effects that can affect the performance of ICs. To create simulation models that accurately predict circuit performance, designers need accurate extraction capabilities. QCP meets TSMC’s 28-nm process requirements for via etch, multi-dimensional etch tables, contact biasing and additional via rules to ensure required support. In addition to meeting the complex requirements of 28-nm design, QCP provides advanced extraction capabilities for ICs implemented in 40-nm and larger process technologies.

Close collaboration with strategic partners continues to be the key to achieving TSMC’s goal of providing the IC industry's most advanced design ecosystem,” said Suk Lee, director, Design Infrastructure Marketing Division, TSMC. “Qualifying QCP, Magma’s next-generation extraction tool, is another milestone in ensuring mutual customers’ silicon success at 28 nm.”

“Already proven to provide faster multi-corner extraction than traditional tools, the adoption of QCP is rapidly increasing,” said Premal Buch, general manager of Magma's Design Implementation Business Unit. “TSMC’s qualification of QCP provides our customers additional confidence in its ability to quickly and accurately extract parasitics on 28-nm designs.”

QCP: Meeting the Extraction Challenges of 28-nm Design
QCP was architected to provide the fastest extraction with the highest accuracy. QCP provides near-linear scalability on multi-processor machines, enabling design teams to reduce runtimes and speed timing closure. It also addresses multi-corner process, voltage and temperature (PVT) problems that emerge at 28 nm by enabling additional corners to be extracted with only a minimal increase in runtime.

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